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  84.0mhz Datasheet PDF File

For 84.0mhz Found Datasheets File :: 1641    Search Time::1.391ms    
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    Golledge Electronics Ltd.
Golledge Electronics, Ltd.
Part No. GSX-6B GSX-6C
OCR Text ...specify 7 84 7pf max 93*- 7 ,84 60 (12.0 ~ <16.0mhz) 40 (16.0 ~ 40.0mhz, fund) 70 (>40.0 ~ 67.0mhz, 3rd ot) 50 (>67.0 ~ 150mhz, 3rd ot) 90 (100 ~200mhz, 5th ot) :...
Description SM CRYSTAL 链霉素水

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    IRFB61N15D

IRF[International Rectifier]
Part No. IRFB61N15D
OCR Text ...(.048) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.15 (.04 5) MIN 1 2 3 LE A D A S S IG N ME N T S 1 - G A TE 2 - D R A IN 3 - SO URCE 4 - D R A IN 14.09 (.5 55 ) 13.47 (.5 30 ) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1.40 (.05 5) 1.15 ...
Description Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
HEXFET? Power MOSFET

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    IRFB9N65APBF

International Rectifier
Part No. IRFB9N65APBF
OCR Text ...4 20 34 18 1417 177 7.0 1912 48 84 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.93 VGS = 10V, ID...0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 520V, = 1.0MHz --- VGS = 0...
Description SMPS MOSFET

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    IRHLA7670Z4

International Rectifier
Part No. IRHLA7670Z4
OCR Text ...T (MeV/(mg/cm )) Br I Au 37 60 84 2 Energy (MeV) 305 370 390 Range (m) 39 34 30 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -6V 60 60 - -7V 35 20 - -8V 30...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK)

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    IRFB9N65A IRFB9N65

IRF[International Rectifier]
Part No. IRFB9N65A IRFB9N65
OCR Text ...4 20 34 18 1417 177 7.0 1912 48 84 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.93 VGS = 10V, ID...0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 520V, = 1.0MHz --- VGS = 0...
Description Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

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    IRF1010EZL IRF1010EZLPBF IRF1010EZPBF IRF1010EZS IRF1010EZSPBF IRF1010EZ

IRF[International Rectifier]
http://
Part No. IRF1010EZL IRF1010EZLPBF IRF1010EZPBF IRF1010EZS IRF1010EZSPBF IRF1010EZ
OCR Text ...) Pulsed Drain Current Max. 84 60 75 340 140 0.90 20 99 180 See Fig.12a,12b,15,16 -55 to + 175 Units A c Maximum Power Dissip...0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 48V, = 1.0MHz VGS = 0V, VDS = 0V t...
Description    AUTOMOTIVE MOSFET

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    IRFB61N15D

International Rectifier
Part No. IRFB61N15D
OCR Text ...(.048) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.15 (.04 5) MIN 1 2 3 LE A D A S S IG N ME N T S 1 - G A TE 2 - D R A IN 3 - SO URCE 4 - D R A IN 14.09 (.5 55 ) 13.47 (.5 30 ) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1.40 (.05 5) 1.15 ...
Description 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)

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    AUIRF7640S2TR AUIRF7640S2TR1

International Rectifier
Part No. AUIRF7640S2TR AUIRF7640S2TR1
OCR Text ...ge Max. 60 20 21 15 5.8 77 84 30 2.4 38 57 See Fig.18a, 18b, 15, 16 270 -55 to + 175 Units V A f e f W mJ A mJ C g ...0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 48V, f=1.0MHz pF Diode Characteristics @ T...
Description DirectFET Power MOSFET
5.8 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
DirectFETPower MOSFET 

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    IRFB9N65 IRFB9N65A

International Rectifier
Part No. IRFB9N65 IRFB9N65A
OCR Text ...4 20 34 18 1417 177 7.0 1912 48 84 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.93 VGS = 10V, ID...0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 520V, = 1.0MHz --- VGS = 0...
Description Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 107.63K  /  8 Page

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    AP9990GMT-HF AP9990GMT-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP9990GMT-HF AP9990GMT-HF-14
OCR Text ...90gmt-hf 5 halogen-free product 84 pulsed drain current 1 240 parameter rating drain-source voltage 60 thermal data parameter gate-source vo...0mhz - 280 - pf r g gate resistance f=1.0mhz - 1.3 - source-drain diode symbol parameter test condi...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 92.00K  /  4 Page

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For 84.0mhz Found Datasheets File :: 1641    Search Time::1.391ms    
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