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  80-80v Datasheet PDF File

For 80-80v Found Datasheets File :: 6044    Search Time::1.937ms    
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    IRFB4410ZGPBF

International Rectifier
Part No. IRFB4410ZGPBF
OCR Text ...V --- 38 57 ns --- 46 69 --- 53 80 nC TJ = 125C --- 82 120 --- 2.5 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated...80V VDS= 40V VDS= 20V 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 20 40 60 80 ...
Description HEXFETPower MOSFET

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    IRFB4310ZGPBF

International Rectifier
Part No. IRFB4310ZGPBF
OCR Text ...s while VDS is rising from 0 to 80% VDSS . Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wi...80V VDS= 50V VDS= 20V 10000 16 C, Capacitance (pF) Ciss 12 6000 8 4000 20...
Description HEXFETPower MOSFET

File Size 289.91K  /  8 Page

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    IRF7452QPBF10

International Rectifier
Part No. IRF7452QPBF10
OCR Text ...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. No...80V VDS = 50V VDS = 20V VGS , Gate-to-Source Voltage (V) C ds 16 10000 C, Capacitance...
Description HEXFETPower MOSFET

File Size 181.65K  /  8 Page

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    FMMTA06 FMMTA06TA

Diodes Incorporated
Part No. FMMTA06 FMMTA06TA
OCR Text ... I CM IC IB PD T j; T stg LIMIT 80 80 4 1 500 100 330 2.64 -55 to + 150 UNIT V V V A mA mA mW mW/ C C THERMAL RESISTANCE PARAMETER Junction to ambient SYMBOL R JA VALUE 379 UNIT C/W ISSUE 2 - MAY 2004 SEMICONDUCTORS 2 FMMTA0...
Description SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS

File Size 87.48K  /  6 Page

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    IRHNA54160

International Rectifier
Part No. IRHNA54160
OCR Text ...ful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in swit...80v ,v gs =0v ??25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100...
Description (IRHNA5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 326.96K  /  8 Page

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    MBRX05100-TP

MICRO COMMERCIAL COMPONENTS
Part No. MBRX05100-TP
OCR Text ... b .063 .071 1.60 1.80 c .045 .053 1.15 1.35 d .031 .045 0. 80 1.15 e .010 .016 0.25 0.40 ...80v 56v 80v mbrx05100 ------ 100v 70v 100v maximum dc blocking voltage mcc catalog number device mar...
Description 0.5 A, 100 V, SILICON, SIGNAL DIODE

File Size 112.74K  /  3 Page

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    RHLG77110 IRHLG77110 IRHLG73110

International Rectifier
Part No. RHLG77110 IRHLG77110 IRHLG73110
OCR Text ...V 100 - -8V 100 - 120 100 80 60 40 20 0 0 -1 -2 -3 -4 VGS -5 -6 -7 -8 Br I Au Fig a. Typical Single Event Effect, Safe Operating...80V VDS = 50V VDS = 20V C, Capacitance (pF) 1000 800 600 400 200 0 1 10 100 Ciss Coss Cr...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB
RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET

File Size 207.44K  /  9 Page

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    PMD11K80

Inchange Semiconductor Company Limited
Part No. PMD11K80
OCR Text ... collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5.0 v i c collector current -...80v; r be = 1k v ce = -80v; r be = 1k , t c =150 -1.0 -5.0 ma i ebo emitter cut-off current...
Description isc Silicon PNP Darlingtion Power Transistor

File Size 49.76K  /  2 Page

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    IRFB4710PBF IRFS4710

International Rectifier
Part No. IRFB4710PBF IRFS4710
OCR Text ...75 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-s...80v ds 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 c, capacitance(pf) co...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 253.25K  /  11 Page

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    MBRX0520 MBRX0530 MBRX0540 MBRX05100 MBRX0560 MBRX0580

Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
Micro Commercial Compon...
Part No. MBRX0520 MBRX0530 MBRX0540 MBRX05100 MBRX0560 MBRX0580
OCR Text ....107 2.30 2.70 .063 .071 1.60 1.80 .045 .053 1.15 1.35 .031 .045 0.80 1.15 .010 .016 0.25 0.40 .004 .018 0.10 0.45 .004 .010 0.10 0.25 ----.006 ----0.15 NOTE IFM =0.5A T J =25 o C SUGGESTED SOLDER PAD LAYOUT 0.074" IR T A =25 ...
Description 0.5 Amp Schottky Rectifier 20 to 100 Volts 0.5 A, 40 V, SILICON, SIGNAL DIODE

File Size 95.83K  /  3 Page

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