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For 8 x16 Found Datasheets File :: 5948 Search Time::1.578ms
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				AAEON Technology
Part No.	IMBA-910 TF-IMBA-910-A10-G2 TF-IMBA-910-A10-VE
OCR Text	... ddr2 533/667/800 memory (up to 8 gb) 10/100base-tx & gigabit ethernet x 2 (optional) integrated intel? enhanced graphics core, vga supp...x16] x 1, pci-express [x4] x 1, pci x 3 industrial motherboard with intel? core? 2 duo processor ...
Description	Intel? Core 2 Duo Processor, FSB 533/800/1066 MHz
File Size	428.95K / 2 Page	View it Online	Download Datasheet

				AAEON Technology
Part No.	IMBA-880 TF-IMBA-880-B10-VE
OCR Text	...ctflash? type 2 x 1 usb2.0 x 8, com x 2, parallel x 1, irda x 1 pci, pci-express [x16] expansions system form factor atx processor intel? core? 2 duo/ pentium? 4/ celeron? d; lga775 cpu, fsb: 533/800/1066 mhz system memory 240-pin ...
Description	Intel? Core 2 Duo/ Pentium? 4/ Celeron? D LGA775 Processor (533/800/1066 MHz FSB)
File Size	396.95K / 2 Page	View it Online	Download Datasheet

				ALSC[Alliance Semiconductor Corporation] ETC
Part No.	AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-75TC AS4LC8M8S0-8TC
OCR Text	...rganization - 2,097,152 words x 8 bits x 4 banks (8Mx8) - 1,048,576 words x 16 bits x 4 banks (4Mx16) * Fully synchronous - All signals refe...x16), DQM (x8). Row and column addresses are multiplexed. Row address: A0~A11. Column address (8Mx8)...
Description	3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
File Size	387.58K / 24 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HY5DU56422DF-H HY5DU56422DF-K
OCR Text	...rsion release - merged hy5du564(8,16)22d(l)f and hy5du564(8,16)22d(l)f-d into hy5du564(8,16)22d(l)f. oct. 2004 1.1 1. changed all notes in...x16 device has two bytewide data strobes (udqs, ldqs) per each x8 i/o ? data outputs on dqs edges w...
Description	64M X 4 DDR DRAM, 0.75 ns, PBGA60
File Size	268.38K / 31 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...& 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the syste...x16) for maskin * Auto & self refresh * 64ms refresh period (4K Cycle) GENERAL DESCRIPTION The K...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...x16) for masking * Auto & self refresh * 64ms refresh period (4K Cycle) GENERAL DESCRIPTION The ...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text	... & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system...x16) for masking * Auto & self refresh * 64ms refresh period (8K Cycle) GENERAL DESCRIPTION The ...
Description	512Mb B-die SDRAM Specification
File Size	147.30K / 15 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...x16) for masking * Auto & self refresh * 64ms refresh period (8K Cycle) GENERAL DESCRIPTION The ...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...x16) for masking * Auto & self refresh * 64ms refresh period (8K Cycle) GENERAL DESCRIPTION The ...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

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