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  7.5amperes Datasheet PDF File

For 7.5amperes Found Datasheets File :: 14911    Search Time::4.125ms    
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    MAC228A10 MAC228-10 MAC228-4 MAC228A4 MAC228-6 MAC228A6 MAC228-8 MAC228A8 MAC228

MOTOROLA INC
Motorola, Inc
ICE Components, Inc.
Part No. MAC228A10 MAC228-10 MAC228-4 MAC228A4 MAC228-6 MAC228A6 MAC228-8 MAC228A8 MAC228
OCR Text ...86 80 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMP) = CONDUCTION ANGLE dc 120 120 180 10 8.0 FIGURE 2 - ON-STATE POWER DISSIPATION dc 6.0 = CONDUCTION ANGLE TJ 110C 30 60 90 = 180 120 104 92 4.0 ...
Description TRIACs 8 AMPERES RMS 200 thru 800 VOLTS 600 V, 8 A, TRIAC, TO-220AB

File Size 83.62K  /  4 Page

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    MBRB4030 MBRB4030_D

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MBRB4030 MBRB4030_D
OCR Text ...Case: Epoxy, Molded * Weight: 1.7 Grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads Readily Solde...5 VF, INSTANTANEOUS VOLTAGE (V) 0.7 0.8 0.1 0 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOU...
Description SWITCHMODE?/a> Power Rectifier
SWITCHMODE Power Rectifier
40 AMPERES 30 VOLTS
SWITCHMODE⑩ Power Rectifier

File Size 69.73K  /  4 Page

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    MCR718 MCR718T4 MCR716T4 MCR716

ONSEMI[ON Semiconductor]
Part No. MCR718 MCR718T4 MCR716T4 MCR716
OCR Text ...CTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction...5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2...
Description Silicon Controlled Rectifier (Reverse Blocking Thyristors)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)

File Size 68.12K  /  6 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text ...DD = 80 Vdc, VGS = 10 Vdc, IL = 7.5 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance -- Junction to Case -- Junction to Ambient -- Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/...
Description TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

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    MTD5P06E

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06E
OCR Text ...on temperature. LD LS -- -- 4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 1.74 1.27 83 67 16 0.29 3.5 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 12 24 13 10 10.4 3.4 4.2 6.2 28 56 32 28 15 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0...
Description TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

File Size 207.75K  /  10 Page

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    MTD5P06V ON2511 MTD5P06V-T4

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06V ON2511 MTD5P06V-T4
OCR Text ...nction temperature. LD -- LS -- 7.5 -- 4.5 -- nH nH ta tb QRR -- -- -- -- 1.72 1.34 97 73 24 0.42 3.5 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 11 26 17 19 12 3.0 5.0 5.0 20 50 30 40 20 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1...
Description 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system

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    MTE125N20E MTE125N20E_D ON2529

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTE125N20E MTE125N20E_D ON2529
OCR Text ...= 125 Adc, VGS = 10 Vdc, RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (1) (IS = 125 Adc...5 5.0 5.0 -- -- -- nH nH ta tb QRR -- -- -- -- 1.00 1.00 310 220 90 9.2 1.5 -- -- -- -- -- C ns Vdc ...
Description From old datasheet system
TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

File Size 227.99K  /  8 Page

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    MTY55N20E MTY55N20E_D ON2720

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
Part No. MTY55N20E MTY55N20E_D ON2720
OCR Text ... = 55 Adc, VGS = 10 Vdc, RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 55 Adc, VGS...5 13 -- -- nH nH ta tb QRR -- -- -- -- 0.75 1.1 310 220 90 4.6 1.2 -- -- -- -- -- C ns Vdc -- -- -- ...
Description TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system

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    P3Z7ACT700W P2Z9ABA900W P7Z7ABB700 P7Z7ABC700 P7Z9AAA900W P7Z7ABB700W P2Z7ACB700W P2Z7ABB700W P3Z9ACT900W P1Z7AAR700W P1

Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semiconductor...
Part No. P3Z7ACT700W P2Z9ABA900W P7Z7ABB700 P7Z7ABC700 P7Z9AAA900W P7Z7ABB700W P2Z7ACB700W P2Z7ABB700W P3Z9ACT900W P1Z7AAR700W P1Z7ABR700W P1Z9AAR900W P1Z9ACR900W P1Z9ADR900V P2Z9AAA900W P2Z9ACA900W P3Z7AAT800W P3Z7ABT700W P3Z7ABT800W P3Z7ACT800W P3Z9AAT900W P3Z9ABT900W P7Z7ABC700W P7Z9AAB900W P7Z9AAC900W
OCR Text ... Dimension A B C D E F G Inches 7.50 3.70 3.15 3.15 0.328 Dia. 2.03 3/8-16 UNC-2B H J K L 1.51 2.52 2.75 0.56 Millimeters 190.50 93.98 80.01...5 volt source. Resistance values for R1 and R2 are specified for two operating temperature ranges. ...
Description Phase Control Modules (345-800 Amperes/400-3000 Volts) 相位控制模块45-800 Amperes/400-3000伏特

File Size 92.04K  /  6 Page

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    PP225D060

POWEREX[Powerex Power Semiconductors]
Part No. PP225D060
OCR Text ...400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 Output Current (Amps) 100 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 Feedback Voltage (Volts) Feedback Voltage (Volts) Feedback Voltage (Vo...
Description POW-R-PAK 200A / 1200V 3 phase IGBT Assembly

File Size 360.12K  /  6 Page

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