|
|
 |

IRF[International Rectifier] International Rectifier, Corp.
|
Part No. |
IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR
|
OCR Text |
...Leakage --- V(BR)DSS Typ. --- 0.66 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1m...0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0... |
Description |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A
|
File Size |
110.34K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |

HARRIS SEMICONDUCTOR Intersil Corporation Samsung semiconductor
|
Part No. |
IRFP9150 FN2293
|
OCR Text |
...CE vs JUNCTION TEMPERATURE
4-66
IRFP9150 Typical Performance Curves
1.25 ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 4000 1.15 C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0.75 -40 0 40 80 120 TJ, JUNCTION TEMPERA... |
Description |
25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET From old datasheet system
|
File Size |
59.22K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|