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  600v-120v Datasheet PDF File

For 600v-120v Found Datasheets File :: 1133    Search Time::1.078ms    
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    Microsemi
Part No. APT68GA60LD40
OCR Text ...ating area @ t j = 150c 202a @ 600v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for sold...120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) f...
Description IGBT w/ anti-parallel diode

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    Microsemi
Part No. APT15GP60BDQ1G
OCR Text ...ctor cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 ga...120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test ...
Description IGBT w/ anti-parallel diode

File Size 187.24K  /  9 Page

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    DIYI Electronic Technol...
Part No. DMD4N60-TU DMK4N60-TU
OCR Text ... 600 2.4 @ v gs =10v 4 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <2...120v v ds =300v v ds =480v 20 gate charge characteristics c oss c rss 400 6 / 10 may,2015-rev.00...
Description    600V N-Channel Power MOSFET

File Size 2,524.41K  /  10 Page

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    SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q67040-S4448 Q67040-S4449 Q67041-A4709 INFINEONTECHNOLOGIESAG-SGU06N60

INFINEON[Infineon Technologies AG]
Part No. SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q67040-S4448 Q67040-S4449 Q67041-A4709 INFINEONTECHNOLOGIESAG-SGU06N60
OCR Text ...- Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...120V 15V 480V C, CAPACITANCE 100pF 10V C oss 5V C rss 0V 0nC 15nC 30nC 45nC 10pF 0...
Description Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT

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    DIYI Electronic Technol...
Part No. DMG8N60-TU
OCR Text ...) 600 1.2 @ v gs =10v 8 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <1...120v v ds =300v v ds =480v 20 gate charge characteristics 700 c iss c oss c rss c iss= c gs +c gd (...
Description    600V N-Channel Power MOSFET

File Size 2,008.12K  /  9 Page

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    Infineon Technologies A...
Part No. IPL60R104C7
OCR Text 600vcoolmosac7powertransistor coolmos?c7isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperj...120v/ns ?increasedefficiencyduetobestinclassfomr ds(on) *e oss andr ds(on) *q g ?bestin...
Description 600V CoolMOSa C7 Power Transistor

File Size 1,405.08K  /  14 Page

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    List of Unclassifed Man...
Part No. 2MBI600TN-060V
OCR Text 600v/300a compact package for 2-pack & 6-pack pb free package 6th generation igbt chip with trench-gate fs temperature & current sensing ...120v 1200 20 450 2.40 2.20 m254 evaluation circuit board optical isolated signal input, alarm outp...
Description IGBT Module for Hybrid Electric Vehicle

File Size 594.02K  /  2 Page

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    Microsemi
Part No. APT15GP60BG APT15GP60SG
OCR Text ...ctor cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 ga...120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test ...
Description IGBT w/o anti-parallel diode

File Size 176.52K  /  6 Page

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For 600v-120v Found Datasheets File :: 1133    Search Time::1.078ms    
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