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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...gh Gain Bandwidth Product (fT = 6.5 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in ...12 3 100 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 50.99K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ... VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter C...12 0.2 11 2.5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 ...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ... VCBO VCEO VEBO IC PT Ti Tstg 9 6 2 30 150 150 -65 to + 150 V V V mA mW C C Caution: Electrostatic Sensitive Device Document No. P1039...12 0.3 11 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ...20mA, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit A A V V 2.50.1 +0.25 1 Transistor...12 100A 80A 60A 4 40A 20A 25C Ta=75C 80 -25C 1.0 0.8 60 0.6 8 40 0.4 0.2 ...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ...k) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150 -55 to +150 Unit V V V mA mA W C C Electrical Characteristics (Ta = 25C) Item Collector cu...12.0 0.3 4.45 0.3 2.5 14.0 1.0 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-2...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...100 120 140 160 (2) (3) 0 0 2 4 6 8 10 20mA 2SC5034 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3...12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 800 -IB2 VCC IC tW Vclamp Collector ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ... 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warran...
Description Silicon NPN Epitaxial npn型硅外延

File Size 23.39K  /  5 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ...- 11.0 -- Typ -- -- -- -- 120 0.6 11.0 13.5 14.0 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ...gned to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this docu...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ...e figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2S...12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 ...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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