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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00S003M
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| OCR Text |
...(max.) - serial page access : 50ns(min.) ? fast write cycle time - program time : 200 s(typ.) - block erase time : 2ms(typ.) ? command/address/data multiplexed i/o port ? hardware data protection - program/erase lockout during p... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,819.19K /
86 Page |
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Download Datasheet
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| OCR Text |
...GL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns
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JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II (400mil) Single power supply of 3.3V +/- 0.3V Battery back up operation(L-version) 2CAS byte control
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tCAC 13n... |
| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
View
it Online |
Download Datasheet |
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