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IRF[International Rectifier]
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| Part No. |
IRGB4045DPBF
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| OCR Text |
...hz ns J ns J nC IC = 6.0A VCC = 400v VGE = 15V
Conditions
Ref.Fig 24 CT1
IC = 6.0A, VCC = 400v, VGE = 15V RG = 47, L=1mH, LS= 150nH...12a
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A ICE = 6.0A ICE = 12a
4
2
2
0 5 10 V... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
778.63K /
10 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRE460R FRE460D FRE460H
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| OCR Text |
... -20V VDS = 500V, VGS = 0 VDS = 400v, VGS = 0 VDS = 400v, VG65S = 0, TC = +125oC Time = 20s VGS = 10V, ID = 12a VGS = 10V, ID = 7A VDD = 250V, ID = 12a Pulse Width = 3s Period = 300s Rg = 10 0 VGS 10 (See Test Circuit) MIN 500 2.0 7 107 2... |
| Description |
12a/ 500V/ 0.410 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12a, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
47.23K /
6 Page |
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Microsemi
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| Part No. |
APT22F80B APT22F80S
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| OCR Text |
...10v , i d = 12a, v ds = 400v resistive switching v dd = 533v , i d = 12a r g = 4.7 6 , v gg = 15v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 12a , ... |
| Description |
FREDFETs
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| File Size |
179.94K /
4 Page |
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Microsemi
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| Part No. |
APT6025BLLG
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| OCR Text |
...tive switching @ 25c v dd = 400v, v gs = 15v i d = 24a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d ...12a 8070 60 50 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 i d = 12a v gs = 10v 0.01750.143... |
| Description |
MOSFET
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| File Size |
151.40K /
5 Page |
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Microsemi
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| Part No. |
APT6025BFLLG
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| OCR Text |
...tive switching @ 25c v dd = 400v, v gs = 15v i d = 24a, r g = 5 ? inductive switching @ 125c v dd = 400v, v gs = 15v i d...12a 8070 60 50 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 i d = 12a v gs = 10v 0.01750.143... |
| Description |
FREDFETs
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| File Size |
153.50K /
5 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BSP125
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| OCR Text |
...lateau voltage Qgs Qgd Qg
VDD =400v, ID =0.13A, VGS =0 to 10V VDD =400v, ID =0.13A
Symbol
Conditions min.
Values typ. 0.18 100 8.2...12a VR=300V, IF=lS, diF/dt=100A/s
IS
TA=25C
-
0.8 156 165
0.12 0.48 1.2 235 250
A
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| Description |
SIPMOS Power-Transistor
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| File Size |
118.85K /
8 Page |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT6025SFLL APT6025BFLL APT6025BFLL_04 APT6025BFLL04
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| OCR Text |
...INDUCTIVE SWITCHING @ 25C VDD = 400v, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 400v, VGS = 15V ID = 24A, RG = 5 ID = 24A, RG = 5 RG = 1.6
...12a
D
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
60 50 40 30 20 10 0 TJ = -55C 0 1 2 3 4 5 6 7 8 9... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
161.25K /
5 Page |
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it Online |
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