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  35ns Datasheet PDF File

For 35ns Found Datasheets File :: 1619    Search Time::0.891ms    
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    Analog Devices, Inc.
ANALOG DEVICES INC
Part No. AD9801
OCR Text ... actual sampling edge) shd t id 35ns 35ns t od t h data n? data n n+1 n+2 n+3 n n+4 1234567 shp actual sampling edge adcclk digital out output load c l = 20pf output delay t od = 15ns latency = 5 cycles internal clock de...
Description CCD Signal Processor For Electronic Cameras(用于电子照相机的CCD信号处理
CCD Signal Processor For Electronic Cameras(?ㄤ??靛??х??虹?CCD淇″?澶????

File Size 259.90K  /  12 Page

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    K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F280

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text ...anged RE Access time(tREA) from 35ns to 40ns - Changed RE High Hold time(tREH) from 15ns to 20ns - Changed WE High Hold time(tWH) from 15ns to 20ns 1. Device Code is changed - TBGA package information : 'B' --> 'D' ex) K9F2808Q0B-BCB0 ,BIB0...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory

File Size 302.44K  /  29 Page

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    STK11C68-5C35M STK11C68-5C45M STK11C68-5C55M STK11C68-5K35M STK11C68-5K45M STK11C68-5K55M STK11C68-5L35M STK11C68-5L45M

List of Unclassifed Manufacturers
ETC[ETC]
Simtek
Electronic Theatre Controls, Inc.
Part No. STK11C68-5C35M STK11C68-5C45M STK11C68-5C55M STK11C68-5K35M STK11C68-5K45M STK11C68-5K55M STK11C68-5L35M STK11C68-5L45M STK11C68-5L55M STK11C68-M 5962-9232404MYA 5962-9232404MXC 5962-9232406MXA 5962-9232405MYA 5962-9232406MYC 5962-9232406MXC 5962-9232406MYA 5962-9232405MXA 5962-9232405MXC
OCR Text ...A V V V 0.4 -55 125 V C tAVAV = 35ns tAVAV = 45ns tAVAV = 55ns E (VCC - 0.2V) all others VIN 0.2V or (VCC - 0.2V) 27 23 20 tAVAV = 35ns tAVAV = 45ns tAVAV = 55ns E VIH; all others cycling E (VCC - 0.2V) all others VIN 0.2V or (VCC - ...
Description CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM
CMOS NV SRAM 的CMOS非易失SRAM

File Size 58.02K  /  10 Page

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    STK20C04 STK20C04-30 STK20C04-35 STK20C04-45 STK20C04-W30 STK20C04-W30I STK20C04-W35 STK20C04-W35I STK20C04-W45 STK20C04

List of Unclassifed Manufacturers
ETC[ETC]
SIMTEK
Electronic Theatre Controls, Inc.
Part No. STK20C04 STK20C04-30 STK20C04-35 STK20C04-45 STK20C04-W30 STK20C04-W30I STK20C04-W35 STK20C04-W35I STK20C04-W45 STK20C04-W45I
OCR Text ... V V V V C tAVAV = 30ns tAVAV = 35ns tAVAV = 45ns All inputs at VIN 0.2V or (VCC - 0.2V) 27 23 20 tAVAV = 30ns tAVAV = 35ns tAVAV = 45ns E VIH; all others cycling E (VCC - 0.2V) all others VIN 0.2V or (VCC - 0.2V) 1 5 2.2 VSS-.5 2.4 V...
Description 512 X 8 NON-VOLATILE SRAM, 30 ns, PDIP28
CMOS nvSRAM High Performance 512 x 8 Nonvolatile Static RAM 高性能的CMOS非易12 × 8非易失性静态RAM

File Size 78.89K  /  8 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9F2808U0B-DIB0 K9F2808U0B-YCB0 K9F2808Q0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808Q0C
OCR Text ...ed re access time(trea) from 35ns to 40ns - changed re high hold time(treh) from 15ns to 20ns - changed we high hold time(twh) from 15ns to 20ns 1. device code is changed - tbga package information : ?b? --> ?d? ex) k9f2808q0...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存

File Size 308.83K  /  29 Page

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    WS512K32-45 WS512K32-20 WS512K32-25 WS512K32-17 WS512K32-35 WS512K32-15 WS512K32-55

White Electronic Designs Corporation
Part No. WS512K32-45 WS512K32-20 WS512K32-25 WS512K32-17 WS512K32-35 WS512K32-15 WS512K32-55
OCR Text ...ltage v ol i ol = 8ma for 15 - 35ns, 0.4 v i ol = 2.1ma for 45 - 55ns, vcc = 4.5 output high voltage v oh i oh = -4.0ma for 15 - 35ns, 2.4 v i oh = -1.0ma for 45 - 55ns, vcc = 4.5 note: dc test conditions: v ih = v cc -0.3v, v il =...
Description 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
512Kx32 SRAM Module(512Kx32静态RAM模块(存取时7ns
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????5ns锛?

File Size 151.06K  /  10 Page

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    HY62UF16806A-DMC HY62UF16806A-DMI HY62UF16806A-SMC HY62UF16806A-SMI

Hynix Semiconductor
Part No. HY62UF16806A-DMC HY62UF16806A-DMI HY62UF16806A-SMC HY62UF16806A-SMI
OCR Text ... parameter - toe : 35ns 25ns@55ns : 40ns 35ns@70ns - tcw : 50ns 45ns@5 5ns - taw : 50ns 45ns@55ns - tbw : 50ns 45ns@55ns - ...
Description 512Kx16bit full CMOS SRAM

File Size 217.24K  /  11 Page

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    Electronic Theatre Controls, Inc.
Part No. STK12C68-IM
OCR Text ... t avav = 25ns 85 ma t avav = 35ns 80 ma t avav = 45ns i cc average v cc current during store 7 ma all inputs 0.2v or 3 (v cc - 0.2v) i cc b average v cc current 15 ma e 0.2v, w 3 (v cc C 0.2v) at t avav = 200ns others ...
Description CMOS nvSRAM 8K x 8 AutoStore Nonvolatile Static RAM Industrial Temperature/Military Screen

File Size 66.01K  /  10 Page

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    意法半导
Part No. M27C516
OCR Text 35ns low power consumption: C active current 30ma at 5mhz C stand-by current 100 m a programming voltage: 12.75v 0.25v programming time: 100 m s/word (typical) electronic signature C manufacturer code: 0020h C device code: 000fh descript...
Description 512Kbit (32Kb x16) OTP EPROM(512Kb OTP EPROM)

File Size 49.18K  /  2 Page

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