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  30.5a Datasheet PDF File

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    HE8050S

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectroni...
Part No. HE8050S
OCR Text 30 Revised Date : 2001.07.18 Page No. : 1/4 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general ...5A, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=1V, IC=500mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f...
Description NPN EPITAXIAL PLANAR TRANSISTOR

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    HE8050

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HE8050
OCR Text 30 Revised Date : 2001.08.13 Page No. : 1/3 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W ...5A) Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ...........................
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 35.35K  /  3 Page

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    ICM7170 ICM7170AIBG ICM7170AIDG ICM7170AIPG ICM7170AMDG ICM7170IBG ICM7170IDG ICM7170IPG ICM7170MDG

INTERSIL[Intersil Corporation]
Part No. ICM7170 ICM7170AIBG ICM7170AIDG ICM7170AIPG ICM7170AMDG ICM7170IBG ICM7170IDG ICM7170IPG ICM7170MDG
OCR Text ...ns ns ns ns 50 0 100 300 100 30 400 - ns ns ns ns ns ns ns 50 30 30 - ns ns ns 12-8 ICM7170 Timing Diagrams A0 - A4...5A. All other specifications remain the same. 6. INTERRUPTS - The Interrupt Status Register (address...
Description Microprocessor-Compatible, Real-Time Clock

File Size 77.04K  /  13 Page

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    IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT

IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
Part No. IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT162646ATPFB IDT54FCT162646ATPV IDT54FCT162646ATPVB IDT54FCT162646CT IDT54FCT162646CTE IDT54FCT162646CTEB IDT54FCT162646CTPA IDT54FCT162646CTPAB IDT54FCT162646CTPF IDT54FCT162646CTPFB IDT54FCT162646CTPV IDT54FCT162646CTPVB IDT54FCT162646ET IDT54FCT162646ETE IDT54FCT162646ETEB IDT54FCT162646ETPA IDT54FCT162646ETPAB IDT54FCT162646ETPF IDT54FCT162646ETPFB IDT54FCT162646ETPV IDT54FCT162646ETPVB IDT54FCT162646T IDT54FCT162646TE IDT54FCT162646TEB IDT54FCT162646TPA IDT54FCT162646TPAB IDT54FCT162646TPF IDT54FCT162646TPFB IDT54FCT16646TPVB IDT54FCT162646TPV IDT54FCT162646TPVB IDT54FCT16646AT IDT54FCT16646ATE IDT54FCT16646ATEB IDT54FCT16646ATPA IDT54FCT16646ATPAB IDT54FCT16646ATPF IDT54FCT16646ATPFB IDT54FCT16646ATPV IDT54FCT16646ATPVB IDT54FCT16646CT IDT54FCT16646CTE IDT54FCT16646CTEB IDT54FCT16646CTPA IDT54FCT16646CTPAB IDT54FCT16646CTPF IDT54FCT16646CTPFB IDT54FCT16646CTPV IDT54FCT16646CTPVB IDT54FCT16646ET IDT54FCT16646ETEB IDT54FCT16646ETPA IDT54FCT16646ETPAB IDT54FCT16646ETPF IDT54FCT16646ETPFB IDT54FCT16646ETPV IDT54FCT16646ETPVB IDT54FCT16646T IDT54FCT16646TE IDT54FC
OCR Text ...1 40 39 38 37 36 35 34 33 32 31 30 29 1OE 1CLKBA 1SBA 1DIR 1CLKAB 1SAB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23...5A at TA = -55C. 5.13 5 IDT54/74FCT16646T/AT/CT/ET, 162646T/AT/CT/ET FAST CMOS 16-BIT BUS T...
Description    FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE)
CAP 33UF 6V 20% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-4000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL SN/PB5% LOWESR-3000
CAP 33UF 4V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3500
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-400
FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE) 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 50V 20% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-700 快速CMOS 16位总线收发寄存器(3态)
CAP 100UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-150 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 35V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...W) 100 125 150 ID = 250A 30 20 1.0 10 0.5 -75 -50 -25 0 25 50 75 0 1.00 10.00 100.00 1000.00 T J , Temperature ( C ) Time (sec) Fig 15. Typical Threshold Voltage Vs. Junction Temperature Fig 16. Typical Power ...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...Air Operation - - 1.67 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL IS ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the I...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...s Max. 1.6 1.3 13 2.5 0.02 30 8.9 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Symbol RJL RJA...5A 1.9A Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 60 40 15V V(BR)DSS tp ...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... 4 www.irf.com APPROVED 30 IRF3315 VDS RD 25 VGS RG D.U.T. + I D , Drain Current (A) 20 -VDD 10V 15 Puls...5A 12A VDS L D R IV E R 600 RG 20V tp D .U .T IA S + V - DD 400 A 0 ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ... C rss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. ...5A 0.007 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.006 4.0...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

File Size 123.62K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...rage Temperature Range Max. 30 12 62 52 248 87 61 0.58 -55 to + 175 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS ...5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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