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  2a 650v Datasheet PDF File

For 2a 650v Found Datasheets File :: 216    Search Time::1.719ms    
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    2N6931 2N6932

Inchange Semiconductor Company Limited
Part No. 2N6931 2N6932
OCR Text ...specified PARAMETER 2N6931 IC=0.2a ;L=25mH 2N6932 V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage...650v; VBE=-1.5V TC=100ae VEB=8V; IC=0 IC=10A ; VCE=3V f=1MHz;VCB=10V CONDITIONS 2N6931 2N6932 ...
Description Silicon NPN Power Transistors

File Size 117.02K  /  3 Page

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    MTN4N70I3

Cystech Electonics Corp.
Part No. MTN4N70I3
OCR Text ... - 2.3 - s v ds =15v, i d =2a i gss - - 100 na v gs = 30 - - 1 a v ds =650v, v gs =0 i dss - - 10 a v ds =520v, v gs =0, t c =125 c *r ds(on) - 3.0 3.5 v gs =10v, i d =2a dynamic *qg - 11 - *...
Description N-Channel Enhancement Mode Power MOSFET

File Size 277.75K  /  11 Page

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    FAN5056MV85

FAIRCHILD[Fairchild Semiconductor]
Part No. FAN5056MV85
OCR Text ...2 120 kHz % sec mV %Vout ILOAD 2a, TYPEDET = 0V ILOAD 2a, TYPEDET = OPEN * * 1.425 3.135 1.5 3.3 80 1.575 3.465 V V %VO ILOAD 2a * 2.375 ...650v 1.675V 1.700V 1.725V 1.750V 1.775V 1.800V 1.825V Note: 1. 0 = processor pin is tied to GND. ...
Description High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms

File Size 158.83K  /  15 Page

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    FAN5071

Fairchild Semiconductor
Part No. FAN5071
OCR Text ...2 120 kHz % sec mV %Vout ILOAD 2a, TYPEDET = 0V ILOAD 2a, TYPEDET = OPEN * * 1.425 3.135 1.5 3.3 80 1.575 3.465 V V %VO ILOAD 2a * 2.375 ...650v 1.675V 1.700V 1.725V 1.750V 1.775V 1.800V 1.825V Note: 1. 0 = processor pin is tied to GND. ...
Description From old datasheet system
High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms

File Size 421.56K  /  15 Page

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    H02N65

Hi-Sincerity Mocroelectronics
Part No. H02N65
OCR Text ...c (v dd =100v, v gs =10v, i l =2a, l=10mh, r g =25 ) 120 mj t l maximum lead temperature for soldering purposes, 1/8? from case for 1...650v, v gs =0v) - - 5 ua i dss drain-source leakage current (v ds =480v, v gs =0v, t j =125 ...
Description N-Channel Power Field Effect Transistor

File Size 124.60K  /  6 Page

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    HFS10N65S

SemiHow Co.,Ltd.
Part No. HFS10N65S
OCR Text ...mperature 2. l=14.2mh, i as =9.2a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 9.2a, di/dt200a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating te...
Description 650v N-Channel MOSFET

File Size 877.94K  /  7 Page

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    FSL126MRT

Fairchild Semiconductor
Part No. FSL126MRT
OCR Text ... w-forming - 40c ~ +125c 1.2a 6.2 30w 40w 17w 25w ka5m0265rydtu notes: 1. pb-free package per jedec j-std-020b. 2. the junction temperature can limit the maximum output power. 3. 230v ac or 100/115v ac with voltage doubler. ...
Description Green-Mode Fairchild Power Switch (FPS?

File Size 876.69K  /  13 Page

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    Advanced Power Electronics
Part No. 04N70BF-A
OCR Text ...e on-resistance v gs =10v, i d =2a - - 2.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 2.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - -...
Description Search --To AP04N70BF-A

File Size 116.29K  /  4 Page

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    AP04N70BF-A

http://
Advanced Power Electronics Corp.
Part No. AP04N70BF-A
OCR Text ... (Tj=150 C) o o VGS=10V, ID=2a VDS=VGS, ID=250uA VDS=10V, ID=2a VDS=600V, VGS=0V VDS=480V,VGS=0V VGS=30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Ga...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 59.50K  /  4 Page

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