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ADPOW[Advanced Power Technology]
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| Part No. |
ARF443 ARF442
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| OCR Text |
...put Power = 200 Watts. * Gain = 22db (Typ.) * Efficiency = 73% (Typ.)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Tota... |
| Description |
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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| File Size |
54.97K /
4 Page |
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ATMEL[ATMEL Corporation]
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| Part No. |
AT86RF535B
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| OCR Text |
...n. The IQMIX has 4, 10, 16, and 22db of switchable gain. The receive poly phase filter (RXPPF) is designed as a frequency shifted leapfrog structure. The filter provides three different bandwidths at three different center frequencies. The ... |
| Description |
3.5GHz WiMAX Transceiver
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| File Size |
306.25K /
13 Page |
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it Online |
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SUMIDA[Sumida Corporation]
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| Part No. |
CFB-6
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| OCR Text |
...Rout)
Specification
600 600 22db Min.
32.77kHz
Frequency Response (Attenuation 0dB at 1KHz)
Please refer to the sales offices on our website for a representative near you www.sumida.com
2/2
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| Description |
Filter Coils
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| File Size |
148.03K /
2 Page |
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CREE[Cree, Inc]
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| Part No. |
CGH27015F
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| OCR Text |
...
Typical EVM and Efficiency at 22db and 33 dB vs Frequency of CGH27015F in Broadband21 dBm vs. Frequency Amplifier Circuit WiMAX EVM & Efficiency at 33 and
3.5 28
3.0
24
2.5
20
EVM (%)
2.0
16
1.5
12
1.0
EVM ... |
| Description |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
1,491.88K /
8 Page |
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it Online |
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United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA2069-99F_00 CHA2069 CHA2069-99F/00
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| OCR Text |
...nce 18-31GHz 2.5dB noise figure 22db gain, 1dB gain flatness Low DC power consumption, 55mA 20dBm 3rd order intercept point Chip size : 2,170 x 1,270x 0.1mm
Frequency ( GHz )
On wafer typical measurements.
Main Characteristics
Ta... |
| Description |
18-31GHz Low Noise Amplifier 18 - 31GHz之间低噪声放大器
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| File Size |
165.19K /
8 Page |
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it Online |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA2294-99F_00 CHA2294 CHA2294-99F/00
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| OCR Text |
... : 35-40GHz 4.0dB Noise Figure. 22db gain Gain control range: 15dB Low DC power consumption, 120mA @ 5V Chip size : 2.32 X 1.235 X 0.10 mm
26 24 22 20 18 16 14 12 10 8 6 4 2 0 35 36
Gain (dB)
NF (dB)
37 38 Frequency (GHz)
39
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| Description |
35-40GHz Low Noise, Variable Gain Amplifier
35-40GHz Low Noise, Variable Gain Amplifier 35 - 40GHz的低噪声，可变增益放大器
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| File Size |
122.05K /
6 Page |
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ETC[ETC]
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| Part No. |
DA2709
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| OCR Text |
...rnally Matched Input and Output 22db Small Signal Gain @2GHz P1dB = 8dBm @2GHz Single Positive Power Supply SOT363 surface-mount package
Pin Out Diagram
GND 4
in a
60H
GND 5 IN 6 Description
Pr el im
Pin Descriptions
Number 1 ... |
| Description |
From old datasheet system
Wideband Amplifier
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| File Size |
188.20K /
9 Page |
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ADPOW
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| Part No. |
VRF151
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| OCR Text |
...AL GAIN @ 175MHz, 50V 150W WITH 22db TYPICAL GAIN @ 30MHz, 50V EXCELLENT STABILITY & LOW IMD COMMON SOURCE CONFIGURATION 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS NITRIDE PASSIVATED REFRACTORY GOLD METALLIZATION
DESCRIP... |
| Description |
N-CHANNEL RF POWER VERTICAL MOSFET
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| File Size |
206.44K /
5 Page |
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it Online |
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Price and Availability
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