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2110.0 Datasheet PDF File

For 2110.0 Found Datasheets File :: 1713 Search Time::1.281ms
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				TAI-SAW TECHNOLOGY CO., LTD.
Part No.	TA0402A
OCR Text	...2140 - insertion loss within 2110 ~2170 mhz il (db) - 2.37 3.5 a mplitude ripple (p-p) within 2110 ~2170 mhz (db) - 1 1.8 a ttenuation (reference level from 0 db) 1920 ~ 1980 mhz ...
Description	SAW Filter 2140MHz SMD 2.5X2.0 mm
File Size	489.17K / 7 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S21050LR3 MRF6S21050LR308 MRF6S21050LSR3
OCR Text	...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C...0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.7% IM3 @ 10 MHz Offset -- - 37...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	389.60K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor, In...
Part No.	MW7IC2220NR109 MW7IC2220NBR1 MW7IC2220GNR1
OCR Text	...nr1 mw7ic2220gnr1 mw7ic2220nbr1 2110 - 2170 mhz, 2 w avg., 28 v single w - cdma rf ldmos wideband integrated power amplifiers case 1886 - ...0.5, +65 vdc gate - source voltage v gs - 0.5, +5 vdc operating voltage v dd 32, +0 vdc storage temp...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	1,201.95K / 27 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF21060
OCR Text	...= 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) g ps 11 12.5 db twoCtone drain efficiency (v dd = 28 vdc, p...0.10 f chip capacitors, kemet #cdr33bx104akws c4, c5 4.7 pf chip capacitors, atc #100b4r7jca500x c...
Description	MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs
File Size	290.98K / 8 Page	View it Online	Download Datasheet

				Avago Technologies
Part No.	HDSP-2503 HDSP-2113 HDSP-2112 HDSP-2111 HDSP-2107 HDSP-2110
OCR Text	...P-2112 HDSP-2502 Orange HDSP-2110 HDSP-2500 Yellow HDSP-2111 HDSP-2501 w w w .D at Sh a et e Green HDSP-2113 H...0.210) PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION RST FL A0 A1 A2 A3 DO NOT CONNECT DO NOT CONN...
Description	(HDSP-250x/-211x Series) Amart Alphanumeric Displays
File Size	261.59K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF7G22L-130N
OCR Text	...rier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 D...0.01 % probability on CCDF; carrier spacing 5 MHz. Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7...
Description	Power LDMOS transistor
File Size	145.63K / 13 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B39212B4302F210
OCR Text	...mum insertion attenuation a max 2110.0 ... 2170.0 mhz 1.9 2.5 db amplitude ripple (p-p) da 2110.0 ... 2170.0 mhz 0.7 1.4 db vswr input 2110.0 ... 2170.0 mhz 2.0 2.4 output 2110.0 ... 2170.0 mhz 2.0 2.4 cmrr (\|s 21 -s 31 \| / \|s 21 +s 31...
Description	Low-loss RF filter for mobile telephone
File Size	114.20K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF5P21180R6 MRF5P21180
OCR Text	...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB fo...0.01% Probability on CCDF. Output Power -- 38 Watts Avg. Power Gain -- 14 dB Efficiency -- 25.5% IM3...
Description	N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor
File Size	406.67K / 9 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF18030BLR3 MRF18030BLSR3
OCR Text	...e Semiconductor Zo = 25 f = 2110 MHz Zload f = 1710 MHz f = 2110 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 250 mA, Pout = 30 W (C...0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.1...
Description	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
File Size	341.89K / 8 Page	View it Online	Download Datasheet

				http:// INFINEON[Infineon Technologies AG]
Part No.	PTF211802A PTF211802E PTF211802
OCR Text	2110-2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDM...0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW 35 -30 * * E...
Description	LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
File Size	165.14K / 8 Page	View it Online	Download Datasheet

For 2110.0 Found Datasheets File :: 1713 Search Time::1.281ms
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