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  20v.06 Datasheet PDF File

For 20v.06 Found Datasheets File :: 6257    Search Time::1.406ms    
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    FS10ASJ-06

Renesas Electronics Corporation
Part No. FS10ASJ-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 10...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE O...
Description MITSUBISHI Nch POWER MOSFET

File Size 74.99K  /  5 Page

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    FS50KMJ-06

Powerex Power Semiconductor...
Mitsubishi Electric Corporation
Powerex Power Semiconductors
Part No. FS50KMJ-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS =...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE O...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.65K  /  4 Page

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    FS10KMJ-06

Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS10KMJ-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 10...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 Tc = 25C Pulse...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 49.55K  /  4 Page

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    FX50SMJ-06

Mitsubishi Electric Semiconductor
Part No. FX50SMJ-06
OCR Text ...tions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -60V, VGS = 0V ID = -1mA, VDS = -10V ID = -25A, VGS = -10V ID = -25A, VGS = -4V ID = -25...06 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 Tc = 25C Pulse Tes...
Description HIGH-SPEED SWITCHING USE

File Size 57.07K  /  4 Page

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    FX6KMJ-06

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6KMJ-06
OCR Text ...tions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -60V, VGS = 0V ID = -1mA, VDS = -10V ID = -3A, VGS = -10V ID = -3A, VGS = -4V ID = -3A, ...06 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 Tc = 25C Pulse Te...
Description HIGH-SPEED SWITCHING USE

File Size 49.56K  /  4 Page

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    FX6KMJ-06

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX6KMJ-06
OCR Text ...tions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -60V, VGS = 0V ID = -1mA, VDS = -10V ID = -3A, VGS = -10V ID = -3A, VGS = -4V ID = -3A, ...06 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 Tc = 25C Pulse Te...
Description MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 54.80K  /  4 Page

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    Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10VSJ-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 10...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE O...
Description BANANA PLUG, GRN 高速开关使
HIGH-SPEED SWITCHING USE

File Size 37.97K  /  4 Page

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    FS50UMJ-06

Renesas Electronics Corporation
Part No. FS50UMJ-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS =...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE O...
Description MITSUBISHI Nch POWER MOSFET

File Size 78.28K  /  5 Page

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    FS70UMJ-06

Renesas Electronics Corporation
Part No. FS70UMJ-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS =...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE O...
Description MITSUBISHI Nch POWER MOSFET

File Size 77.57K  /  5 Page

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    IPB80N06S2L-06 IPP80N06S2L-06

Infineon Technologies AG
Part No. IPB80N06S2L-06 IPP80N06S2L-06
OCR Text ...t. See diagram 13 Qualified at -20V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick)...06 IPP80N06S2L-06 1 Power dissipation P tot = f(T C); V GS 4 V 2 Drain current I D = f(T C); V GS ...
Description OptiMOS Power-Transistor

File Size 153.51K  /  8 Page

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