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  200..240v Datasheet PDF File

For 200..240v Found Datasheets File :: 1355    Search Time::1.406ms    
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ADPOW[Advanced Power Technology]
Part No. APT1201R5B APT1201R5BVR
OCR Text ...4.5V 8 4.5V 4 4V 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 4 4V ...240V 12 VDS=600V 8 16 TJ =+150C 10 5 TJ =+25C 1 .5 4 50 100 150 200 250 300 350 Qg...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm

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ADPOW[Advanced Power Technology]
Part No. APT1201R6 APT1201R6B APT1201R6BVR
OCR Text ....5V 4 6 4.5V 4 2 4V 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 2 4V ...240V TJ =+150C 10 5 TJ =+25C 12 VDS=600V 8 1 .5 4 50 100 150 200 250 300 Qg, TOTAL...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm

File Size 62.51K  /  4 Page

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    CYSTEKEC[Cystech Electonics Corp.]
Part No. CMBD2004XN CMBD2004XN3 CMBD2004 CMBD2004A CMBD2004AN3 CMBD2004C CMBD2004CN3 CMBD2004N3 CMBD2004S CMBD2004SN3
OCR Text ...100 Junction Temperature---Tj() 200 Power Derating Curve 400 350 Power Dissipation---PD(mW) 300 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA() CMBD2004/A/C/SN3 CYStek Product Specification CYStech Electronics ...
Description High voltage switching (double) diodes

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    IRFP4242PB IRFP4242PBF

International Rectifier, Corp.
IR
Part No. IRFP4242PB IRFP4242PBF
OCR Text ... 2500 2000 1500 1000 500 180 200 220 240 Energy per pulse (J) 3000 L = 220nH C = 0.4F 100C 25C 3000 L = 220nH C = Variable...240V VDS= 150V VDS= 60V 10000 16 C, Capacitance (pF) 8000 Ciss 12 6000 8 ...
Description PDP MOSFET MOSFET的等离子

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    APT12080JVR

ADPOW[Advanced Power Technology]
Part No. APT12080JVR
OCR Text ... VDS=600V 1 .5 4 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE F...
Description POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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    APT12080LVR

ADPOW[Advanced Power Technology]
Part No. APT12080LVR
OCR Text ... VDS=600V 1 .5 4 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE F...
Description POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT33GF120 APT33GF120BR

Advanced Power Technology
ADPOW
Part No. APT33GF120 APT33GF120BR
OCR Text ...L IMPEDANCE (C/W) 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0 0 D=0.5 0.1 0.05 0.2 0.1 0.05 PDM 0.02 0.01 0.01 0.005 Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x...
Description MOSFET
Fast IGBT

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    Microsemi
Part No. SUPPRESSOR MSC0294A
OCR Text ...OLTAGE MIN / MAX (VBR) NOTE 2 V 200 / 225 400 / 450 735 / 900 MAXIMUM REVERSE LEAKAGE (ID) A 5 5 5 MAXIMUM CLAMPING VOLTAGE (VC) V 280 560 1120 MAXIMUM PEAK PULSE CURRENT (IPP) NOTE 3 A 200 200 200 1.00 2.54 + Hole to fit 8mm dia. ...
Description From old datasheet system

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    TLP666J

Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
Part No. TLP666J
OCR Text ...3) Test Condition Min. 1.0 200 Typ. 1.15 30 10 1.7 0.6 500 0.2 Max. 1.3 10 1000 3.0 Unit V A pF nA V mA V / s V / s (Note 3) dv / dt test circuit Rin VCC 120 Vin 1 2 3 6 RL 5V, VCC 0V dv / dt 4 4k dv / dtc ...
Description TOSHIBA Photocoupler GaAs Ired & Photo&#8722;Triac
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TOSHIBA Photocoupler GaAs Ired & Photo-Triac
Photo Coupler GaAs Ired & Photo -Triac

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