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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI4N80 FQB4N80
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| OCR Text |
... 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
...9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 3.9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25... |
| Description |
800V N-Channel MOSFET
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| File Size |
658.51K /
9 Page |
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Microsemi Corporation
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| Part No. |
APT17F100B APT17F100S
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| OCR Text |
...e, Charge Related
Min
Typ 19 4845 65 405 165
Max
Unit S
pF
VGS = 0V, VDS = 0V to 667V
5
Effective Output Capacitance, ...9A, VDS = 500V Resistive Switching VDD = 667V, ID = 9A RG = 4.7 6 , VGG = 15V
85 150 26 70 29 31 ... |
| Description |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns
N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
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| File Size |
131.07K /
4 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD6632
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| OCR Text |
...GS
VGS
0
10%
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
(c)2002 Fairchild Semiconductor Corporation
FDD6632 Rev. B
FDD6632
Thermal Resistance vs. Mounting Pad Area
The maximum rate... |
| Description |
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mOhm
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| File Size |
177.72K /
11 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IDD09E60
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| OCR Text |
...
Symbol VRRM IF
Value 600 19.3 13
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM ...9A, Tj=25C IF=9A, Tj=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thic... |
| Description |
Silicon Power Diodes - 9A EmCon in TO252
Fast Switching EmCon Diode 快速开关快恢复二极
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| File Size |
179.43K /
8 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
W10NK80Z
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| OCR Text |
...x. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.... |
| Description |
Search --To STW10NK80Z
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| File Size |
346.33K /
11 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT18M80S APT18M80B
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| OCR Text |
...re. 2 Starting at TJ = 25C, L = 19.63mH, RG = 10, IAS = 9A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as... |
| Description |
N-Channel MOSFET
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| File Size |
249.33K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF7321D2PBF
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| OCR Text |
...15V 8.9 VGS = -10V, See Fig. 6 19 VDD = -15V 20 ID = -1.0A ns 51 RG = 6.0 48 RD = 15, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fi...9A ID =-4.9A
-I D , Drain-to-Source Current (A)
1.5
TJ = 25C TJ = 150C
10
1.0
0.5
... |
| Description |
Ideal For Buck Regulator Applications
FETKY MOSFET & Schottky Diode
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| File Size |
206.16K /
8 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FC30 K7R323682C-FCI20 K7R323682C-FCI25 K7R323682C-FCI30 K7R323682C-FEC20 K7R323682C-FEC25
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| OCR Text |
...EG
D (Data in)
36 (or 18) 19 (or 20) WRITE/READ DECODE
36 (or 18)
WRITE DRIVER
ADDRESS
19 (or 20)
ADD REG
OUTPUT SEL...9A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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| File Size |
455.05K /
20 Page |
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it Online |
Download Datasheet |
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