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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN175
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| OCR Text |
... output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : = 120 deg. (typ.)
3.90.25
4.... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
41.45K /
2 Page |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN172
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| OCR Text |
... output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability
1. 0 0. 15
2.40.3... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
35.25K /
2 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MMG3013NT1
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| OCR Text |
...eel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3013NT1
0 -6000 MHz, 20 dB 20.5 dBm InGaP HBT
12
3
CASE 1514-01, STYLE...900 MHz 20 -17 -11 20.5 36 2140 MHz 17 -19 -9 20.5 34 3500 MHz 14.5 -15 -12 19 32 Unit dB dB dB dBm ... |
| Description |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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| File Size |
206.11K /
12 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
MMKP383
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| OCR Text |
...1 51 61 71 14 24 34 44 54 64 74 12 22 32 42 52 62 72 15 25 35 45 55 65 - dimensions relating to this code should remain in Parenthesis - - -...900 V/s 290 V/s 190 V/s 130 V/s >100000 M >100000 s >30000 M >220 V 400 V; 1 minute 2840 V; 1 minute... |
| Description |
From old datasheet system
AC and Pulse Double Metallized Polypropylene Film Capacitors MMKP Radial Potted Type
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| File Size |
182.03K /
19 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
MMKP483
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| OCR Text |
...% 5% 3% 3% 00 - - 02 - - 10 - - 12 20 - - 22 36 30 35 39 32 46 40 45 49 42 56 50 55 59 52 66 60 65 69 62
483
Taped on reel (bent back)...900 V/s 290 V/s 190 V/s >100000 M >100000 s >30000 M >220 V 400 V; 1 minute 2840 V; 1 minute Documen... |
| Description |
Double Metallized, lacquered, 7,5-27,5mm pitch
AC and Pulse Double Metallized Polypropylene Film Capacitors MMKP Radial Epoxy Lacquered Type
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| File Size |
204.50K /
21 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXAC203302FVV1R250
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| OCR Text |
...nt -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm...900 ma, ? = 2025 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ?2025 MHz
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| File Size |
349.01K /
7 Page |
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MPLUSE[M-pulse Microwave Inc.]
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| Part No. |
MP4T682539 MP4T6825 MP4T682500 MP4T682533 MP4T682535
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| OCR Text |
...
1. 2.
Absolute Maximum
20V 12 V 1.5 V 25 mA +200C2 -65C to +200C -65C to +150C
See power derating curves. Die or ceramic packages -1...900 1500 1900 2500 2900 3300 3900 4500 4900 5500 Frequency (MHz) 100 300 500 700 900 1500 1900 2500 ... |
| Description |
Low Current 8 Volt, Low Noise High fT Silicon Transistor
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| File Size |
191.75K /
10 Page |
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it Online |
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Price and Availability
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