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  1.9ghz Datasheet PDF File

For 1.9ghz Found Datasheets File :: 836    Search Time::1.469ms    
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AD[Analog Devices]
adi
Analog Devices, Inc.
Part No. AD8315ACP AD8315ARM AD8315ARM-REEL AD8315ARM-REEL7 AD8315ACP-REEL7 AD8315 AD8315ACP-EVAL AD8315ACP-REEL AD8315-EVAL
OCR Text ...re 50 ) Accurate Scaling from 0.1 GHz to 2.5 GHz Temperature-Stable Linear-in-dB Response Log Slope of 23 mV/dB, Intercept at -60 dBm at 0.9...9GHz 0.9GHz -10 -20 0.1GHz -30 -40 0.9GHz -50 -60 1.9ghz -70 -80 0.2 2.5GHz 3 -7 -17 -27 -37 -...
Description 50 dB GSM PA Controller
IC,AMP POWER CONTROLLER,BIPOLAR,LLCC,8PIN

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    ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 ATF-501P8

Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
Part No. ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 ATF-501P8
OCR Text 1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High Linearity and P1dB * Low Noise Fig...9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz an...
Description ATF-501P8 · Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text ...2mA to 8mA * fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 22 10V 2V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 17 dB...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280 Q62702-F1378
OCR Text ...2mA to 8mA * fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 22 10V 2V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system

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    LT5534ESC6 LT5534

Linear Technology
Part No. LT5534ESC6 LT5534
OCR Text ...UT 47 ENABLE RF DET DET VCC 1.6 1 0 -1 TA = 25C TA = 85C TA = -40C -50 -40 -30 -20 -10 RF INPUT POWER (dBm) 0 -2 -3 VOUT VOUT (V) ...9GHz 2.5GHz 1.6 1.2 0.8 0.4 0 -70 -60 0 2.5GHz -1 -2 -3 -70 1.9ghz VOUT (V) -50 -40 -30 ...
Description 50MHz to 3GHz RF Power Detector with 60dB Dynamic Range
Amplifier

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    NJG1309VB2

New Japan Radio
njr
Part No. NJG1309VB2
OCR Text ...ain control range lPackage f=1.9ghz typ. VDD2,3=+3.0V typ. +VGG=+1.0V typ. 150mA typ. @21dBm output power 37dB typ. @21dBm output power 26dB typ. @21dBm output power SSOP20-B2 (Pin pitch 0.5mm) nPIN CONFIGURATION V Type (Top View) 1 ...
Description TRANSMITTING POWER AMPLIFIER GaAs MMIC

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    BFP640

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BFP640
OCR Text ...ing noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz * High maximum stable gain Gms = 24 dB at 1.8 GHz * Gol...9GHz Power Gain Gma, Gms = (f), |S21| = f (f) VCE = 3V, IC = 30mA 55 dB 26 24 22 20 18 1...
Description    NPN Silicon Germanium RF Transistor

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    BFR340F

INFINEON[Infineon Technologies AG]
Part No. BFR340F
OCR Text ...fiers and oscillators 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR340F Maxim...9GHz VCE = parameter 22 dB 20 19 18 f = 1.8GHz VCE = parameter 20 5V 3V 2V 1V 0.75V mA 5...
Description RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators

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    NJG1519KC1

New Japan Radio
njr
Part No. NJG1519KC1
OCR Text ...compression point 36dBm typ. @f=1.9ghz, VCTL=3V lLow insertion loss 0.55dB typ. @f=0.9GHz, PIN =34dBm, VCTL=3V 0.80dB typ. @f=1.9ghz, PIN =32dBm, VCTL=3V lHigh isolation 24dB typ. @f=0.9GHz, VCTL=3V 18dB typ. @f=1.9ghz, VCTL=3V lLow control...
Description SP4T SWITCH GaAs MMIC

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    RF2472

RF MICRO DEVICES
Part No. RF2472
OCR Text ...cations, but is also useful for 1.9ghz PCS and K-PCS, 900MHz ISM, and 1.5GHz GPS applications. The RF2472 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space...
Description 2.4GHz LOW NOISE AMPLIFIER WITH ENABLE

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For 1.9ghz Found Datasheets File :: 836    Search Time::1.469ms    
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