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  1.8us Datasheet PDF File

For 1.8us Found Datasheets File :: 442    Search Time::0.937ms    
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    HYNIX[Hynix Semiconductor]
Part No. GMS81C3004
OCR Text 1. OVERVIEW............................................1 Description .........................................................1 Features .....8us, 15.2us at 4.19MHz - 61us, 244us, 488us, 1.95ms at 32.768KHz * 51 Programmable I/O pins (Include...
Description CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVER
File Size 786.42K  /  90 Page

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    HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HYMP112S64MP8-E4 HYMP112S64LMP8-C4 HYMP112S64LMP8-C5 HYMP112S64LMP8-E3 HYMP112S64LMP8-E4 HYMP112S64MP8 HYMP112S64MP8-C4 HYMP112S64MP8-C5 HYMP112S64MP8-E3
OCR Text 1 History 1) Defined target spec. 2) Corrected Pin assignment table Date July 2004 Remark 128Mx64 bits This document is a general prod...8us refresh period at Lower than TCASE 85, 3.9us( 85 TCASE 95) * * Serial Presence Detect(SPD) wi...
Description    DDR2 SDRAM SO-DIMM
SCREW LOCKS FEMALE SETS
SCREW LOCKS MALE 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
File Size 398.36K  /  17 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H1G0638C-UC_LB0 K4H1G0738C-UC_LA2 K4H1G0638C-UC/LA2 K4H1G0638C-UC/LB0 K4H1G0738C-UC/LA2 K4H1G0738C-UC/LB0
OCR Text ...ANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Sam...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II Pb-Free pack...
Description Stacked 1Gb C-die DDR SDRAM Specification
File Size 336.97K  /  23 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H1G0438M-TC_LB0 K4H1G0438M-TC_LB3 K4H1G0838M-TC_LA2 K4H1G0838M-TC_LB0 K4H1G0438M-TC/LB0 K4H1G0838M-TC/LB0 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB3 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3
OCR Text 1.0 October, 2004 Revision 1.0 October, 2004 DDR SDRAM 1Gb M-die (x4, x8) 1Gb M-die Revision History Revision 0.0 (March, 2003) - Fi...8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burst refresh...
Description 1Gb M-die DDR SDRAM Specification
File Size 203.73K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-ULB3 K4H1G0438M-LA2 K4H1G0438M-LB0 K4H1G0438M-LB3 K4H1G0438M-UC K4H1G0438M-UC_LA2 K4H1G0438M-UC_LB0 K4H1G0438M-UC_LB3 K4H1G0438M-UC0 K4H1G0438M-UC2 K4H1G0438M-UC3 K4H1G0438M-UCA2 K4H1G0438M-UCB0 K4H1G0438M-UCB3 K4H1G0438M-ULA2 K4H1G0438M-ULB0 K4H1G0438M-ULB3 K4H1G0838M-LA2 K4H1G0838M-LB0 K4H1G0838M-LB3 K4H1G0838M-UC_LA2 K4H1G0838M-UC_LB0 K4H1G0838M-UC_LB3 K4H1G0838M-UC0 K4H1G0838M-UC2 K4H1G0838M-UC3 K4H1G0838M-UCA2 K4H1G0838M-UCB0 K4H1G0838M-UCB3 K4H1G0838M-ULA2 K4H1G0838M-ULB0
OCR Text ...ee (RoHS compliant) Revision 1.1 October, 2004 Revision 1.1 October, 2004 DDR SDRAM 1Gb M-die (x4, x8) Pb-Free 1Gb M-die Revision ...8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burst refresh...
Description 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size 203.93K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_LAA K4H510638E-TC_LB0 K4H510738E K4H510738E-TC_LA2 K4H510738E-TC_LAA
OCR Text 1.0 Rev. 1.0 July. 2003 DDR SDRAM stacked 512Mb E-die (x4/x8) st. 512Mb E-die Revision History Revision 1.0 (July, 2003) - First ver...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
File Size 188.40K  /  22 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K4H510838B-NC_LB0 K4H510838B-NC_LB3 K4H510838B-NC_LCC K4H510838B-VC_LA2 K4H510838B-VC_LB0 K4H510838B-VC_LB3
OCR Text ...ANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Sam...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-400 (Leade...
Description 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
File Size 341.67K  /  24 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text 1.1 Rev. 1.1 September. 2003 DDR SDRAM 256Mb E-die (x4, x8) 256Mb E-die Revision History Revision 1.0 (July, 2003) - First release R...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA package DDR...
Description DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size 195.42K  /  18 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
OCR Text ...ANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Sam...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA package DDR...
Description 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size 241.25K  /  24 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4H560438E-NC_LB0 K4H560438E-NC_LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560438E-NCB3 K4H560438E-NLA2 K4H560438E-NLB0 K4H560438E-NLB3 K4H560838E-NC_LA2 K4H560838E-NC_LB0 K4H560838E-NC_LB3 K4H560838E-NCA2 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLA2 K4H560838E-NLB0
OCR Text ...ANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Sam...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-300 packag...
Description 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
File Size 212.16K  /  24 Page

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