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0.6v-vf Datasheet PDF File

For 0.6v-vf Found Datasheets File :: 3141 Search Time::1.734ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	VND05 VND05B VND05B011Y VND05B012Y VND05B_012Y VND05B_011Y
OCR Text	...Test Condit ions Tc=85C; VDS(on)0.5V; VCC=13V IOUT=In; VCC=13V; Tj=25C Off state; T j=25C; VCC=13V IOUT=7.5A; Tj=85C; VCC=13V Tj=25C Min 6 1...6V about. It is possible to connect this pin to an higher voltage via an external resistor calculate...
Description	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
File Size	86.01K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	VNQ690SP VNQ690SP13TR
OCR Text	...25C Maximum Switching Energy (L=0.38mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=14A) Junction operating temperature Storage temperature Value ...6V up to 24V; -40C<Tj<150C unless otherwise specified) POWER (per each channel) Symbol VCC (#) VUSD...
Description	QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
File Size	187.78K / 19 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	VUM24-05 VUM2405 VUM24-05N
OCR Text	...5 = 35 A VDSS = 500 V RDS(on) = 0.12 W 1 2 34 Symbol VDSS VDGR VGS ID ID IDM PD IS ISM VRRM IdAV IFSM MOSFET Test Conditions TVJ = 2...6V 80 A 70 60 ID 50 40 TVJ = 25C TVJ = 125C 2.5 RDS(on) ID=18A 2.0 norm. 1.5 VGS= 5 V ...
Description	Power Factor Correction Modules: MOSFET Power MOSFET Stage for Boost Converters
File Size	99.88K / 4 Page	View it Online	Download Datasheet

				COMCHIP[Comchip Technology]
Part No.	CDSU101A
OCR Text	...e withstand, high reliability. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603 (1608) standar...6V, IF = 10 mA, RL =50 ohms Conditions I F = 100 mA DC Symbol Min Typ Max Unit VF IR CT Trr ...
Description	SMD Switching Diode
File Size	52.43K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HSU277
OCR Text	...* Low forward resistance. (rf = 0.7 max) * Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information ...6V, f = 1 MHz I F = 2 mA, f = 100 MHz 2 HSU277 Main Characteristic 10 -2 10 -3 Reverse curr...
Description	Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
File Size	26.91K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRU1010
OCR Text	...CKAGE ORDER INFORMATION Tj (C) 0 To 150 2-PIN PLASTIC TO-252 (D-Pak) IRU1010CD 3-PIN PLASTIC SOT-223 (Y) IRU1010CY 2-PIN PLASTIC Ultra Thin-Pak (P) IRU1010CP 8-PIN PLASTIC SOIC (S) IRU1010CS Rev. 1.4 06/29/01 1 IRU1010 ABSOLUTE M...
Description	1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR 1A低压差型正，可调式稳压器
File Size	94.64K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP10N10E ON2538
OCR Text	... 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM N-Channel Enhancement-Mode Silicon Gate (R) D G S CASE 221A-06, Style 5 TO-220AB ...6V 1 8 5V 0.9 4 4V 0 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4 20 0.8 0.7 -50...
Description	From old datasheet system TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
File Size	237.69K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text	... 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS (R) G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise note...6V 8 1 0.9 4 5V 0 0 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4 20 0.8 0.7 -50 -25...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
File Size	249.12K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text	... 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise ...6V 5V VGS = 10 V 9V I D, DRAIN CURRENT (AMPS) 20 25C 16 12 8 4 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTA...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
File Size	239.56K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Motorola, Inc
Part No.	MTP5N40E ON2629
OCR Text	...rred Device TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM (R) G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC...6V 1.2 VDS = VGS ID = 0.25 mA 1.1 6 1 4 5V 0.9 2 4V 0 0 4 8 12 16 VDS, DRAIN...
Description	From old datasheet system TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
File Size	258.42K / 8 Page	View it Online	Download Datasheet

For 0.6v-vf Found Datasheets File :: 3141 Search Time::1.734ms
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