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Freescale Semiconductor
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| Part No. |
MRF6VP3450HR5 MRF6VP3450HSR5 MRF6VP3450HSR6
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| OCR Text |
... drain - source voltage v dss - 0.5, +110 vdc gate - source voltage v gs - 6.0, +10 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c document number: mrf6vp3... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
680.43K /
18 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGA4815-EPU
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| OCR Text |
0
CPD = 0.2 pF RPD = 15 Ohm
TGA4815-EPU
Key Features and Performance
6500 Single-Ended Transimpedance >10GHz 3dB Bandwidth 1.7mApp Max...65 to 150 C
0 0 0
TGA4815-EPU
Notes 2/ 2/ 2/ 2/ 3/ 4/
These ratings represent the maximum op... |
| Description |
10 GB/s Differential Transimpedance Amplifier 10Gb/s Differential TIA
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| File Size |
104.13K /
7 Page |
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ST Microelectronics
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| Part No. |
TS942BIPT TS942IPT TS942IN TS942IDT
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| OCR Text |
...v v in input voltage range 3) -0.3 to 12.3 v t oper operating free air temperature range -40 to + 85 c t std storage temperature range -65 to +150 c t j maximum junction temperature 150 c r thjc thermal resistance junction to case 4) sot2... |
| Description |
OUTPUT RAIL TO RAIL MICROPOWER OPERATIONAL AMPLIFIERS
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| File Size |
326.65K /
15 Page |
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NEC[NEC]
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| Part No. |
NEL2035F03-24
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| OCR Text |
...LINE DIMENSIONS (Unit: mm)
2.8 0.2 2 x 3.3 0.3
6.35 0.4 1.53 0.3
1
FEATURES
* High Linear Power and Gain * Low Internal Modulati...65 to 150 UNIT V V V V A W C/W C C
Document No. P11584EJ1V0DS00 (1st edition) Date Published June... |
| Description |
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
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| File Size |
105.39K /
12 Page |
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it Online |
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Price and Availability
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