0.5-6ghz pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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0.5-6ghz Datasheet PDF File

For 0.5-6ghz Found Datasheets File :: 882 Search Time::1.969ms
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				Infineon Technologies AG
Part No.	BFR360L3
OCR Text	...ut > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!...5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 3 V hFE 6...
Description	RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz
File Size	100.93K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP136 BFP136W
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...5 V hFE 50 100 200 IEBO 1 A ICBO 50 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit ...
Description	RF-Bipolar - For power amplifier in DECT and PCN systems NPN Silicon RF Transistor
File Size	77.85K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP180W
OCR Text	0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point ...
Description	NPN Silicon RF Transistor
File Size	114.58K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP182R
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, m...
Description	NPN Silicon RF Transistor RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
File Size	86.41K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP182W
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, m...
Description	RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
File Size	76.44K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR183T
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, m...
Description	NPN Silicon RF Transistor
File Size	79.60K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR183W
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, m...
Description	RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
File Size	78.50K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
Part No.	CHR2295 CHR2295-99F_00 CHR2295-99F/00
OCR Text	...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5.0dB noise figure 10dBm LO input power -10dBm RF input power (1dB gain comp.) Low DC power consumpt...
Description	24-30GHz Integrated Down Converter 24 - 30GHz的集成下变频
File Size	143.39K / 6 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	LX5506B LX5506BLQ
OCR Text	... Footprint: 3x3mm2 Low Profile: 0.9mm APPLICATIONS/BENEFITS The LX5506B is a power amplifier optimized for the FCC Unlicensed National I...5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated cir...
Description	InGaP HBT 4 6GHz Power Amplifier From old datasheet system InGaP HBT 4 6GHz Power Amplifier
File Size	195.65K / 7 Page	View it Online	Download Datasheet

				http:// Sirenza Microdevices, Inc
Part No.	SZM-2066Z
OCR Text	.../W 10 503 7.5 12.5 Min. 2500 32.0 32.2 33.5 33.7 26.0 -45 7.7 10.5 15.5 0.9 to 1.8 583 4 50 663 -40 Typ. Max. 2700 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility f...
Description	2.4-2.7GHz 2W Power Amplifier
File Size	637.60K / 13 Page	View it Online	Download Datasheet

For 0.5-6ghz Found Datasheets File :: 882 Search Time::1.969ms
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