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First Components Intern...
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| Part No. |
IRF640FP
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| OCR Text |
...e breakdown voltage (v gs = 0 v, i d = 250 a) v (br)dss 200 v drain-source leakage current (v ds = rated v dss , v gs = 0 ...18a 200v n channel power mosfet
typical electrical characteristics irf 6 40fp 18a 200v n channel... |
| Description |
IRF640FP 18A 200V N CHANNEL POWER MOSFET
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| File Size |
162.58K /
5 Page |
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GTM
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| Part No. |
GJ35N03
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| OCR Text |
...0 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 ...18A VGS= 20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A ID=18A VDS=20V VGS=5V VD... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
249.13K /
4 Page |
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Alpha & Omega Semicondu...
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| Part No. |
AOI2210 AOD2210 AOD2210-14
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| OCR Text |
...m i as avalanche energy l=0.1mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc t a =25c t a =7...18a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters... |
| Description |
200V N-Channel MOSFET
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| File Size |
355.51K /
6 Page |
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GTM
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| Part No. |
GJ405
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| OCR Text |
...0 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 ...18A VGS= 20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A ID=-18A VDS=-15V V... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
277.21K /
4 Page |
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it Online |
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GTM
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| Part No. |
GJ40N03
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| OCR Text |
...0 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 ...18A VGS= 20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=18A VGS=4.5V, ID=14A ID=18A VDS=24V VGS=5V VD... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
265.34K /
5 Page |
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Advanced Power Electron...
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| Part No. |
AP40T03GH-HF AP40T03GH-HF-16
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| OCR Text |
... junction temperature 3 0 25 50 75 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c ...18a v g =10v 10 30 50 70 0 5 10 15 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =14a t ... |
| Description |
Fast Switching Characteristic
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| File Size |
101.81K /
5 Page |
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