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  0.062 Datasheet PDF File

For 0.062 Found Datasheets File :: 19795    Search Time::4.047ms    
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    IXST35N120B IXSH35N120B

IXYS[IXYS Corporation]
Part No. IXST35N120B IXSH35N120B
OCR Text ...1200 20 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C C g g TO-247 AD (IXSH) (TAB) ...062 in.) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching ...
Description IGBT

File Size 81.21K  /  2 Page

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    IXTA1N100 IXTP1N100

IXYS[IXYS Corporation]
Part No. IXTA1N100 IXTP1N100
OCR Text ...mperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characte...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MOSFET

File Size 45.67K  /  2 Page

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    MMBT6517LT1 MMBT6517LT1_D ON2130

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MMBT6517LT1 MMBT6517LT1_D ON2130
OCR Text ...VCBO VEBO IB IC Value 350 350 5.0 250 500 2 EMITTER Unit Vdc Vdc Vdc mAdc mAdc 1 2 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) T...062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. Preferr...
Description From old datasheet system
Motorola Preferred Device
High Voltage Transistor

File Size 229.86K  /  8 Page

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    MMBT6517 MMBT6517LT1

LRC[Leshan Radio Company]
Part No. MMBT6517 MMBT6517LT1
OCR Text ...V CBO V EBO Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mAdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IB IC THERMAL CHARAC...062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO 350 350 ...
Description High Voltage Transistors(NPN Silicon)

File Size 165.41K  /  5 Page

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    MMST2222A-7 MMST2222A

DIODES[Diodes Incorporated]
Part No. MMST2222A-7 MMST2222A
OCR Text ...m A B C D E G H J D E L Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 ...062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be fou...
Description NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

File Size 52.96K  /  3 Page

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    MRW2001 MRW2003

MOTOROLA[Motorola, Inc]
Part No. MRW2001 MRW2003
OCR Text ...river amplifier stages in the 1.0 to 2.3 GHz frequency range. * Designed for Class B or C, Common Base Power Amplifiers * Specified 28 Volt,...062 Glass-Teflon r = 2.55 CC MRW2003 2.0 GHz Board Material = 0.020 Glass-Teflon r = 2.55 F...
Description MICROWAVE POWER TRANSISTORS

File Size 101.23K  /  6 Page

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    SI7810DN

VISAY[Vishay Siliconix]
Part No. SI7810DN
OCR Text ...ID (A) 5.4 4.6 rDS(on) (W) 0.062 @ VGS = 10 V 0.084 @ VGS = 6 V D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low 1.07-mm Profile D PWM Optimized APPLICATIONS D Primary Side Switch D In-R...
Description N-Channel 100-V (D-S) MOSFET

File Size 36.28K  /  4 Page

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    SPX29302A SPX29302AT5 SPX29302AU5 SPX29302AT5_TR SPX29302AT5/TR SPX29302T5 SPX29302T5-L SPX29302T5-L/TR SPX29302T5/TR SP

SIPEX[Sipex Corporation]
Part No. SPX29302A SPX29302AT5 SPX29302AU5 SPX29302AT5_TR SPX29302AT5/TR SPX29302T5 SPX29302T5-L SPX29302T5-L/TR SPX29302T5/TR SPX29302U5
OCR Text ...1.5A, VIN=VOUT+1V IOUT=3.0A VIN=0.5V less than specified VOUT, IOUT=10mA VOUT=0V (Note 4) CL=10F CL=33F 0.06 0.2 20 50 250 370 10 37 1.7 4.0...062 .045 .234 .090 .540 - .190 .040 .022 .590 .415 .415 .072 .055 .258 .115 .560 .250 .156 .11...
Description 3A High Current, Low Dropout Voltage Regulator, 1%
3A High Current, Low Dropout Voltage Regulator Adjustable, Fast Response Time
3A High Current / Low Dropout Voltage Regulator Adjustable / Fast Response Time

File Size 54.51K  /  7 Page

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    TNPW2010 TNPW0805 TNPW1206 TNPW0402 TNPW1210 TNPW2512 TNPW TNPW0603

Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. TNPW2010 TNPW0805 TNPW1206 TNPW0402 TNPW1210 TNPW2512 TNPW TNPW0603
OCR Text ...RIC 40401-801 EIA 575 0402 1005 0.063 0.062 SIZE LIMITING ELEMENT TEMPERATURE TOLERANCE RESISTANCE VOLTAGE COEFFICIENT RANGE V MAX. 25 E-SERIES ppm/C % 25 0.5 100R-10K 100 0.5 10R-91R 100 0.5 11K-100K TNPW0603 0603 1608 0.1 0.062 75 25 ...
Description Ultra-stable thin film technology; Pulse resistant;
Thin Film Flat Chip Resistors; High-Stability
Thin Film, Rectangular, Resistor Chips
Thin Film/ Rectangular/ Resistor Chips

File Size 78.30K  /  4 Page

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    AVD350 ASI10566

Advanced Semiconductor
Part No. AVD350 ASI10566
OCR Text ... MAXIMUM inches / mm .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .4...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.73K  /  1 Page

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