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  0.0106 Datasheet PDF File

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    2N4403

General Semiconductor
Part No. 2N4403
OCR Text 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N4401 is recommended. On special request, thi...
Description SMALL SIGNAL TRANSISTORS (PNP)

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    2N4403 2N4402

Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
Part No. 2N4403 2N4402
OCR Text ...erial has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E 625 mW TO-92 (10D3) 0.18 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = ...
Description Si-Epitaxial PlanarTransistors 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

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    2N4403

Weitron Technology
Part No. 2N4403
OCR Text ...IC PD Tj Tstg 2N4403 -40 -40 -5.0 -600 -625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc mW C C DEVICE MARKING 2N4403=2N4403 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) Collector-...
Description General Purpose Transistors PNP Silicon

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    ONSEMI[ON Semiconductor]
Part No. 2N4921G 2N4923G 2N4921 2N4921_06 2N4922 2N4922G 2N4923 2N492106
OCR Text ...Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A * Excellent Power Dissipation Due to Thermopad Construction - * * * * PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to PNP 2N4918, 2N4...
Description Medium−Power Plastic NPN Silicon Transistors

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    ONSEMI[ON Semiconductor]
Part No. 2N5087G 2N5087RLRAG 2N5087 2N508707
OCR Text ...IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO-92 CASE 29 STYLE 1 2 BASE 1 EMITTER 3 STRAIGHT LEAD BULK PACK 12 1 THERMAL CHARACTERISTICS Characteristic Thermal Resi...
Description Amplifier Transistor PNP Silicon

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    2N5087 2N5087-D

ONSEMI[ON Semiconductor]
Part No. 2N5087 2N5087-D
OCR Text ...IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C COLLECTOR 3 Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 1 EMITTER 2 BASE 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHA...
Description Amplifier Transistor PNP Silicon
Amplifier Transistor(PNP Silicon)

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    2N5089 2N5088

UTC[Unisonic Technologies]
Part No. 2N5089 2N5088
OCR Text ... TEST CONDITIONS IC=1.0mA, IB=0 MIN MAX UNIT 30 25 V(BR)CBO IC=100A, IE=0 35 30 ICBO VCB=20V, IE=0 VCB=15V, IE=0 IEBO VEB=3.0V, IC=0 VEB=4.5V, IC=0 50 100 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 300 400 350 450 300 400 900 1...
Description NPN GENERAL PURPOSE AMPLIFIER

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    ONSEMI[ON Semiconductor]
Part No. 2N5302G 2N5302_06 2N5302 2N530206
OCR Text ...uration Voltage - * VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available* MAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwise noted) Rating Symbol VCEO VCB IC IB Value 60 60 30 Collector-Emitter Voltage Collector-Base V...
Description High−Power NPN Silicon Transistor

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    2N5302

Wing Shing Computer Components
Part No. 2N5302
OCR Text ...) Test Condition IC=10 mA IE=0 IC=5 mA RBE= IE=5 mA IC=0 VCB=30V IE=0 VEB=4V IC=0 VCE=5V IC=10A IC=10A IB=1.0A Min 50 50 6 Typ Max Unit V V V mA mA V 15 0.1 0.1 60 1.0 Wing Shing Computer Components Co., (H.K.)Ltd. H...
Description NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

File Size 46.46K  /  1 Page

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    2N555000 2N5550 2N5550BU 2N5550TA 2N5550TAR 2N5550TF 2N5550TFR 2N5550J24Z 2N5550D26Z

FAIRCHILD[Fairchild Semiconductor]
Part No. 2N555000 2N5550 2N5550BU 2N5550TA 2N5550TAR 2N5550TF 2N5550TFR 2N5550J24Z 2N5550D26Z
OCR Text ... 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) " ...
Description NPN Epitaxial Silicon Transistor
Amplifier Transistor

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