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Silicon Storage Technology
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Part No. |
39LF020
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OCR Text |
...ST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories
Data Sheet
FEATURES:
* Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 * Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF512/010/020/... |
Description |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
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File Size |
274.30K /
25 Page |
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hitachi
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Part No. |
4AM11
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OCR Text |
...-resistance N-channel: RDS(on) 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) 0.2 , VGS = -10 V, I D = -2.5 A * Capable of 4 V gate drive * Low drive current * High speed switching * High density mounting * Suitable for H-bridged motor... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
33.18K /
5 Page |
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IRF[International Rectifier]
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Part No. |
50WQ04FN 50WQ04FNTR 50WQ04FNTRL 50WQ04FNTRR
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OCR Text |
...y
50WQ04FN Units
5.5 40 550 0.44 - 40 to 150 A V A V C
Case Styles 50WQ04FN
Base Cathode
4, 2
1
Anode
Anode
3
D-PAK
www.irf.com
1
50WQ04FN
Bulletin PD-20524 rev. F 06/04
Voltage Ratings
Part number
VR ... |
Description |
SCHOTTKY RECTIFIER
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File Size |
536.17K /
5 Page |
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AEROFLEX[Aeroflex Circuit Technology]
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Part No. |
5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q512K32-SWC 9Q512K32 UT9Q512K32 UT9Q512K32-SPC 5962D0151101QXC 5962D0151101TXC 5962L0151101TXC 5962L0151101QXC 5962P0151101QXC 5962P0151101TXC
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OCR Text |
...Immune >80 MeV-cm2 /mg - LET TH(0.25) = >10 MeV-cm 2/mg - Saturated Cross Section (cm2) per bit, 5.0E -9 - <1E-8 errors/bit-day, Adams 90% geosynchronous heavy ion q Packaging options: - 68-lead dual cavity ceramic quad flatpack (CQFP) (wei... |
Description |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). UT9Q512K32 16Megabit SRAM MCM UT9Q512K32 16Megabit SRAM MCM 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
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File Size |
135.00K /
14 Page |
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it Online |
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Price and Availability
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