0.0067 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : B11BD SG217T E002806 TDA9513 HB7121B 04B12ADL LT8043 D1050
	Product Description
	Full Text Search

0.0067 Datasheet PDF File

For 0.0067 Found Datasheets File :: 2998 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				Shindengen
Part No.	2SA1599
OCR Text	... 1 minute (Recommended torque : 0.3Nm) Ratings -55150 150 -60 -40 -7 -10 -20 -1.5 -2 25 2 0.5 Ratings Min -40 Max -0.1 Max -0.1 Max -0.1 Min 70 Max -0.3 Max -1.2 Max 5 TYP 50 Max 0.3 Max 1.5 Max 0.5 Unit V V V A A A A W kV Nm El...
Description	Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type)
File Size	286.35K / 8 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SA1699 0119
OCR Text	...VCE(sat) VBE(sat) VCB=-300V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA VCE=-30V, IC=-10mA IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA 60* 70 -0.8 -1.0 Conditions Ratings min typ max -0.1 -0.1 200* MHz V V Unit A A Continued on next page. Any and ...
Description	PNP Epitaxial Planar Silicon Transistors From old datasheet system
File Size	71.09K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1502 2SD2275
OCR Text	0 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 26.00.5 10.0 s Features q q q Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V 1.5 ...
Description	Silicon PNP epitaxial planar type Darlington
File Size	69.17K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1503 2SD2276
OCR Text	0 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 26.00.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < -2.5V 1.5 ...
Description	SILICON PNP EPITAXIAL PLANAR TYPE DARLINGTON(FOR POWER AMPLIFICATION)
File Size	69.80K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1599 2SD2457
OCR Text	... magazine packing. 2.60.1 0.4max. 45 1.0-0.2 +0.1 0.40.08 4.0-0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Base curr...
Description	Silicon PNP epitaxial planer type(For power amplification)
File Size	38.43K / 2 Page	View it Online	Download Datasheet

				NEC
Part No.	2SB1657
OCR Text	...RES * Low VCE(sat) VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) 3.8 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) 3.2 0.2 ( 0.126) * High DC Current Gain hFE = 150 to 600 (@VCE...
Description	AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS
File Size	45.72K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Quanzhou Jinmei Electronic Co.,Ltd. Quanzhou Jinmei Electro...
Part No.	2SC2305 2SC2305-2014 2SC2305-15
OCR Text	...TIONS IC=10mA ;RBE= IC=1m A; IE=0 IE=1m A; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V 15 8 MIN 400 400 7 SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 2SC2305 TYP. MAX...
Description	SILICON NPN POWER TRANSISTORS
File Size	39.54K / 3 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SC3494
OCR Text	... 26 13 Typ -- -- -- -- -- -- 0.63 0.6 1.8 5.0 29 17 Max -- -- -- 0.5 0.5 200 0.75 1.1 3.5 -- -- -- Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE ...
Description	SILICON NPN EPITAXIAL PLANAR
File Size	23.48K / 5 Page	View it Online	Download Datasheet

				SANYO
Part No.	2SC3495
OCR Text	...ter saturation voltage (VCE(sat)0.5V). * High VEBO (VEBO15V). * Small Cob (Cob=1.8pF typ). JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta...
Description	NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
File Size	96.51K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC3587
OCR Text	...d for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES * Low no...
Description	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
File Size	89.64K / 8 Page	View it Online	Download Datasheet

For 0.0067 Found Datasheets File :: 2998 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |