0.0053 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2210
OCR Text	...Unit: mm 1.50.1 2.60.1 0.4max. s Features q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25C) Ratings 25 20 12 1 0.5 * 45 1.0-0.2 +0....
Description	Silicon NPN epitaxial planer type(For low-voltage output amplification)
File Size	41.04K / 2 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SD2210
OCR Text	...: mm 4.50.1 1.60.2 1.50.1 4.0+0.25 -0.20 2.50.1 3 0.40.04 0.40.08 1.50.1 3 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collect...
Description	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
File Size	82.92K / 4 Page	View it Online	Download Datasheet

				Matsshita / Panasonic
Part No.	2SD2210 0291
OCR Text	...Unit: mm 1.50.1 2.60.1 0.4max. s Features q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25C) Ratings 25 20 12 1 0.5 * 45 1.0-0.2 +0....
Description	Transistor From old datasheet system
File Size	50.68K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2459 2SD2185
OCR Text	... 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the...
Description	Silicon NPN epitaxial planer type(For low-frequency output amplification)
File Size	36.03K / 2 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SD2459
OCR Text	...ng and the magazine packing. 4.0+0.25 -0.20 2.50.1 3 1.0+0.1 -0.2 0.40.04 1 0.40.08 1.50.1 3 3 2 0.50.08 2.60.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Bas...
Description	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
File Size	74.74K / 4 Page	View it Online	Download Datasheet

				Sanken Electric Co., Ltd. SANKEN[Sanken electric]
Part No.	2SD2495
OCR Text	...=5mA IC=5A, IB=5mA VCE=12V, IE=-0.5A VCB=10V, f=1MHz 2SD2495 100max 100max 110min 5000min 2.5max 3.0max 60typ 55typ V V 13.0min B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) sAbsolute max...
Description	Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍扩散平面达林顿晶体 6 A, 110 V, NPN, Si, POWER TRANSISTOR Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
File Size	23.87K / 1 Page	View it Online	Download Datasheet

				Panasonic Semiconductor Toshiba Semiconductor
Part No.	2SD2504
OCR Text	0.70.1 0.70.2 12.90.5 * Low collector-emitter saturation voltage VCE(sat) * Large collector current IC Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitte...
Description
File Size	66.93K / 3 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SD2527
OCR Text	...5C) Ratings 80 60 6 8 4 1 40 2.0 150 -55 to +150 Unit V V V A A A W C C 15.00.5 3.20.1 13.70.2 4.20.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak col...
Description	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)
File Size	40.46K / 2 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SD2528
OCR Text	...C) Ratings 80 60 6 10 5 1 40 2.0 150 -55 to +150 Unit V V V A A A W C C 15.00.5 3.20.1 13.70.2 4.20.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak col...
Description	Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
File Size	41.71K / 2 Page	View it Online	Download Datasheet

				NEC
Part No.	2SJ598 2SJ598-Z
OCR Text	...RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID = -6 A) * Low Ciss: Ciss = 720 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS ...
Description	P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251 TO-252
File Size	155.42K / 9 Page	View it Online	Download Datasheet

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