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For 0.0031 Found Datasheets File :: 3668 Search Time::2.485ms
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				SANYO[Sanyo Semicon Device]
Part No.	2SC5506
OCR Text	...s unit:mm 2048B [2SC5506] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage ...
Description	Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
File Size	39.75K / 4 Page	View it Online	Download Datasheet

				PANASONIC CORP Panasonic Semiconductor
Part No.	2SC5553
OCR Text	0) 15.50.5 3.20.1 5 3.00.3 5 26.50.5 (23.4) 5 5 5 0.70.1 I Features * High breakdown voltage, and high reliability through the use of a glass passivation layer * High-speed switching * Wide area of safe operation (ASO) ...
Description	Silicon NPN triple diffusion mesa type(For horizontal deflection output)
File Size	52.63K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5577
OCR Text	...ns unit:mm 2048B [2SC5577] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B...
Description	Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
File Size	37.17K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5578
OCR Text	...ns unit:mm 2048B [2SC5578] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B...
Description	Horizontal Deflection Switching Transistors Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
File Size	36.77K / 4 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SC5729
OCR Text	0.5A) 2SC5729 Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complement...
Description	Medium power transistor (30V, 0.5A)
File Size	65.58K / 4 Page	View it Online	Download Datasheet

				Wing Shing Computer Components
Part No.	2SD288
OCR Text	...t) Test Condition VCB= 50V , IE=0 VCE= 5V , IC=0.5A IC=1A , IB=0.1A 40 Min Typ Max 50 240 1.0 Unit A V Wing Shing Computer Components Co., (H.K)Ltd. Homepage: http:/ /www.wingshing.com TeL(852)2341 9276 Fax:(852)2797 8153 . e_ mai...
Description	NPN EPITAXIAL SILICON TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER)
File Size	30.17K / 1 Page	View it Online	Download Datasheet

				PANASONIC CORP Fuji Electric PANASONIC[Panasonic Semiconductor]
Part No.	2SK1228
OCR Text	0.3 +0.2 unit: mm 0.650.15 s Features q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive 0.650.15 1.5 -0.05 +0.25 0.95 2.9 -0.05 1 1.90.2 +0.2...
Description	Silicon N-Channel MOS FET
File Size	33.21K / 2 Page	View it Online	Download Datasheet

				hitachi
Part No.	2SK1304
OCR Text	...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * -------------------------------------------------------------------------------------- ----------...
Description	Silicon NPN Triple Diffused From old datasheet system
File Size	59.33K / 7 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK2487 2SK2487-A
OCR Text	...(in millimeter) 4.7 MAX. 1.5 7.0 1.00.2 5.45 4.50.2 0.60.1 2.80.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) FEATURES * Low On-Resistance RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A) 1.0 15.7 MAX. 4 3.20.2 * Low Ciss Ciss = 2...
Description	8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	111.25K / 8 Page	View it Online	Download Datasheet

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