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Micro Commercial Compon...
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| Part No. |
2SC2881-O-13
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| OCR Text |
...89 1.base 2.collector 3.emitter tm micro commercial components classification of h fe rank range marking oy 80-160 120-240 co1 cy1 www. mccsemi .com 1 of 3 b a e d g h f k j c 1 2 3 2sc2881-y electrical characteri... |
| Description |
NPN Silicon Power Transistors
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| File Size |
257.64K /
3 Page |
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Vishay Semiconductors
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| Part No. |
VO3063-X007T VO3063-X006
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| OCR Text |
... te voltage, either direction i tm = 100 ma peak, i f = rated i ft v tm 1.7 3 v holding current, either direction i h 200 a inhibit voltage (mt1-mt2 voltage above which device will not trigger) v inh 12 22 v leakage in inhibited state i... |
| Description |
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| File Size |
108.59K /
6 Page |
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it Online |
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Radiotronix
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| Part No. |
WI.DP1203-868-EVM-R RK-DP1203-915-R
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| OCR Text |
...sing the rk-wi.dp1203-xxx-evm-r tm evaluation software ............................... .................. 8 4.1. com p ort s etup and s election ................................................... ..................................... |
| Description |
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| File Size |
1,252.32K /
22 Page |
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New Jersey Semi-Conduct...
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| Part No. |
150C100B 150C60B 150C120B 150C80B
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| OCR Text |
...tsm 3000 a i2t 37,oooa2s tc tc "tm tc t = = 73c = 73c = 500 a(peak) - 73c, 60hz 8.3 ms thermal and mechanical characteristics operating junction temp range storage temperature range maximum thermal resistance typical thermal resistance (gre... |
| Description |
Silicon Control ed Rectifier
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| File Size |
136.78K /
2 Page |
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Powerex Power Semicondu...
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| Part No. |
FG2000JV-90DA
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| OCR Text |
...lue
feb.1999 t j = 125 c, i tm = 2000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 2250v, v gk = C2v t j = 125 c, i tm = 2000a,... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
45.78K /
4 Page |
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Mitsubishi Electric Sem...
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| Part No. |
FG2000JV-90DA
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| OCR Text |
...lue
feb.1999 t j = 125 c, i tm = 2000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 2250v, v gk = C2v t j = 125 c, i tm = 2000a,... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
40.58K /
4 Page |
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Powerex Power Semicondu...
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| Part No. |
FG2000FX-50DA
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| OCR Text |
...mal resistance t j = 125 c, i tm = 2000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 1250v, v gk = C2v t j = 125 c, i tm = 2200a,... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
77.12K /
4 Page |
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it Online |
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Price and Availability
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