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For -limited Found Datasheets File :: 121982 Search Time::1.718ms
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				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). U Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . R Starting TJ = 25C, L = 0.13...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK754R0-55B BUK764R0-55B
OCR Text	... [1] [2] [3] [4] Current is limited by chip power dissipation rating. Continuous current is limited by package. Refer to document 9397 750 12572 for further information. Conditions: a) Maximum value not quoted. Repetitive rating defined...
Description	N-channel TrenchMOS standard level FET
File Size	92.22K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	BTS442E2 BTS442E299 Q67060-S6206-A2 Q67060-S6206-A3 Q67060-S6206-A4 BTS442-E2 BTS442E2E3043 BTS442E2E3062A
OCR Text	... required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Infineon Technologies AG 1 22.03.99 PROFET(R) BTS 442 E2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Loa...
Description	Smart Highside Power Switch 18mOhm - Vbb(on) = 4.5V-42V - TO220 AB/5
File Size	303.05K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	... Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.21mH Cal...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 0.13mH, VGS = 10V RG = 25, IAS = 100A. (See Figure 12) ISD 100A, di/dt 150A/s, VDD V(BR)DSS, TJ 200C Pulse width 400s; duty ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDB3502
OCR Text	...in Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C ...
Description	N-Channel Power Trench? MOSFET 75V, 14A, 47mΩ N-Channel Power Trench㈢ MOSFET 75V, 14A, 47mヘ
File Size	274.41K / 6 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	BAT64-04 BAT64-05 BAT64-06 BAT64
OCR Text	Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 3 3 BAT64-04 3 3 Pin Configuration 1 = ANODE 2 = NC 3 =...
Description	SILICON PLANAR SCHOTTKY DIODES
File Size	135.06K / 4 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...ated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - 120V AC Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surf...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP26N40 FDPF26N40
OCR Text	...econds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambi...
Description	N-Channel MOSFET 400V, 26A, 0.16Ω N-Channel MOSFET 400V, 26A, 0.16ヘ
File Size	545.46K / 9 Page	View it Online	Download Datasheet

For -limited Found Datasheets File :: 121982 Search Time::1.718ms
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