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For vds Found Datasheets File :: 36593    Search Time::5.172ms    
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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...TA = 25C TL = 90C IDM PD Symbol vds VGS ID IRF7811AV 30 20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V www.irf.com 1 12/13/00 IRF7811AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Dr...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...ie w DEVICE RATINGS IRF7809A vds RDS(on) QG Qsw Qoss 30V 8.5 m 73 nC 22.5 nC 30 nC IRF7811A 28V 12 m 23 nC 7 nC 31 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...85 VGS = 10V, ID = 4.8A 4.0 V vds = VGS, ID = 250A 25 vds = 500V, VGS = 0V A 250 vds = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S vds = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC vds = 400V 18 VGS = 10V...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...85 VGS = 10V, ID = 4.8A 4.0 V vds = VGS, ID = 250A 25 vds = 500V, VGS = 0V A 250 vds = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss...
Description Power MOSFET(vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...A ID = 250 A, Referenced to 25C vds = 500 V, VGS = 0 V vds = 400 V, TC = 125C VGS = 30 V, vds = 0 V VGS = -30 V, vds = 0 V 500 ------0.55 ------10 100 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltag...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...85 VGS = 10V, ID = 4.8A 4.0 V vds = VGS, ID = 250A --- S vds = 50V, ID = 4.8A 25 vds = 500V, VGS = 0V A 250 vds = 400V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 39 ID = 8.0A 10 nC vds = 400V 19 VGS = 10V, See Fig. 6 and 13 --...
Description Power MOSFET(vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ... 0 ID = 1mA VGS = 10V VGS = 10V vds = VGS vds 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 vds = 25V f = 1MHz VGS = 10V vds = 0.5BvdsS ID = 8A vds = 0.5BvdsS VDD = 50V ID = 8A RG = 7.5W ID = 8A ID = 5A ID = 8A ID = 250mA IDS = 5A vds = 0.8Bvds...
Description P-Channel Power MOSFET For HI-REL Application(vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...V ID = -11A VGS = 10V ID = -18A vds = VGS ID = -250mA vds -15V IDS = -11A VGS = 0 vds = 0.8BvdsS TJ = 125C VGS = -20V VGS = 20V VGS = 0 vds = -25V f = 1MHz VGS = -10V ID = -18A vds = 0.5BvdsS VDD = -50V ID = -18A RG = 9.1 Min. -100 ...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text .... . . . . . . . . . . . . . . . vds Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . ....
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...ID =-4.0A VGS =-10V, ID =-6.5A vds = VGS, ID =-250A vds >-15V, IDS =-4.0A vds=-160V, VGS=0V vds =-160V VGS = 0V, TJ = 125C VGS =-20V VGS =-20V VGS =-10V, ID=-6.5A vds =-100V VDD =-100V, ID =-6.5A, RG =7.5 IGSS IGSS Qg Qgs Qgd td(on) tr ...
Description TRANSISTORS P-CHANNEL(vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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