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Sanyo
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Part No. |
2SC3086
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OCR Text |
Transistor
2SC3086
500V/3A Switching Regulator Applications
Features
* High breakdown voltage (VCBO800V). * Fast switching speed. * Wi...12A, L=200H, IB2=-0.12A,
Turn-ON Time Storage Time Fall Time
ton tstg tf
clamped IC=2A, IB1... |
Description |
NPN Triple Diffused Planar Silicon Transistor
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File Size |
95.57K /
4 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
NDP408 NDP408A NDP408AE NDP408B NDP408BE NDB408BE NDB408B NDB408A NDB408AE
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OCR Text |
...l Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produce...12A
15
V DS = 12V 64 24
CAPACITANCE (pF)
200 100 50
C oss
10
C rss f = 1 MHz V GS... |
Description |
N-Channel Enhancement Mode Field Effect Transistor2A,80V.9ΩN沟道增强型MOS场效应管(漏电流12A, 漏源电压80V,导通电.9Ω 11 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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File Size |
71.87K /
6 Page |
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it Online |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
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Part No. |
NDP6020P NDB6020P
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OCR Text |
Transistor
General Description
These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's ...12A V G S =-4.5V
DRAIN-SOURCE ON-RESISTANCE
1.6
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V T... |
Description |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
60.89K /
6 Page |
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it Online |
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STMicro
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Part No. |
STTA1206DI STTA1206D 3167
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OCR Text |
...OTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : TO-220AC Electrical insulation : 2500VRMS Capacit...12A 600V 28ns 1.5V
K
A NC
D2PAK STTA1206G
A K
A K
TO-220AC STTA1206D
Insulated ... |
Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE From old datasheet system
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File Size |
87.49K /
9 Page |
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it Online |
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Price and Availability
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