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  tk-v Datasheet PDF File

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    VSLB4940

Vishay Siliconix
Part No. VSLB4940
OCR Text ... coefficient of v f i f = 1 ma tk vf --1.5-mv/k reverse current v r = 5 v i r - - 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j -21-pf radiant intensity i f = 100 ma, t p = 20 ms i e 32 65 110 mw/sr radiant power i ...
Description High Speed Infrared Emitting Diode

File Size 103.90K  /  5 Page

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    Intersil
Part No. ISL21080CIH341 ISL21080CIH333 ISL21080CIH330
OCR Text ...ee) pkg. dwg. # isl21080dih309z-tk bcla 0.9 0.7 -40 to +85 3 ld sot-23 p3.064 isl21080dih310z-tk bcma 1.024 0.7 -40 to +85 3 ld sot-23 p3.06...v in to gnd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to...
Description 300nA NanoPower Voltage References

File Size 761.78K  /  20 Page

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    VSMB3940X01-GS08 VSMB3940X01-GS18

Vishay Siliconix
Part No. VSMB3940X01-GS08 VSMB3940X01-GS18
OCR Text ... coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 70 pf radiant intensity i f = 100 ma, t p = 20 ms i e 71321m...
Description High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

File Size 136.83K  /  6 Page

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    ISL99201IRTAEVZ ISL99201IRTBEVZ ISL99201IRTCEVZ ISL99201IRTDEVZ ISL99201IRTCZ-T ISL99201IRTAZ-TK ISL99201IRTCZ-TK

Intersil Corporation
Part No. ISL99201IRTAEVZ ISL99201IRTBEVZ ISL99201IRTCEVZ ISL99201IRTDEVZ ISL99201IRTCZ-T ISL99201IRTAZ-TK ISL99201IRTCZ-TK
OCR Text ... 3x3 tdfn l8.3x3a isl99201irtaz-tk (notes 1, 2) 201a 6 -40 to +85 8 ld 3x3 tdfn l8.3x3a isl99201irtbz-t (notes 1, 2) 201b 9.6 -40 to +85 8 l...v dd +0.3v recommended operating conditions ambient temperature range . . . . . . . . . . . . . . ....
Description Filterless High Efficiency 1.5W Class D Mono Amplifier
   Filterless High Efficiency 1.5W Class D Mono Amplifier

File Size 372.00K  /  11 Page

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    VSMF3710 VSMF371009

Vishay Siliconix
Part No. VSMF3710 VSMF371009
OCR Text ... coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 61022mw/sr i f = 1 a, t p = 100 s i e 100 ...
Description High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

File Size 145.37K  /  7 Page

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    ISL23328UFRUZ-T7A ISL23328UFRUZ-TK ISL23328UFVZ ISL23328UFVZ-T7A ISL23328UFVZ-TK ISL23328TFRUZ-T7A ISL23328TFRUZ-TK ISL2

Intersil Corporation
Part No. ISL23328UFRUZ-T7A ISL23328UFRUZ-TK ISL23328UFVZ ISL23328UFVZ-T7A ISL23328UFVZ-TK ISL23328TFRUZ-T7A ISL23328TFRUZ-TK ISL23328TFVZ ISL23328TFVZ-T7A
OCR Text ...4 ld tssop m14.173 isl23328tfvz-tk (notes 1, 2) 23328 tfvz 100 -40 to +125 14 ld tssop m14.173 isl23328ufvz (note 2) 23328 ufvz 50 -40 to +1...v cc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Dual, 128-Tap, Low Voltage Digitally Controlled Potentiometer (XDCP?

File Size 742.61K  /  20 Page

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    ISL95811 ISL95811UFRTZ ISL95811UFRTZ-TK ISL95811UFUZ ISL95811UFUZ-T ISL95811UFUZ-TK ISL95811WFRTZ ISL95811WFRTZ-TK ISL95

Intersil Corporation
Intersil, Corp.
Part No. ISL95811 ISL95811UFRTZ ISL95811UFRTZ-TK ISL95811UFUZ ISL95811UFUZ-T ISL95811UFUZ-TK ISL95811WFRTZ ISL95811WFRTZ-TK ISL95811WFUZ-T ISL95811WFUZ-TK
OCR Text ...UZ ISL95811WFUZ-T* ISL95811WFUZ-TK* ISL95811WFRTZ ISL95811WFRTZ-TK* ISL95811UFUZ ISL95811UFUZ-T* ISL95811UFUZ-TK* ISL95811UFRTZ ISL95811UFRT...V V/ms ms EEPROM SPECIFICATIONS EEPROM Endurance EEPROM Retention SERIAL INTERFACE SPECIFICATIONS...
Description Single Digitally Controlled Potentiometer (XDCP&#153;); Temperature Range: Full-Range Ind; Package: 8-MSOP T&amp;R
Single Digitally Controlled Potentiometer (XDCP垄芒)
Single Digitally Controlled Potentiometer (XDCP?
Single Digitally Controlled Potentiometer (XDCP&#153;); Temperature Range: Full-Range Ind; Package: 8-MSOP 10K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO8

File Size 471.32K  /  14 Page

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    VSMF2893GX01

Vishay Siliconix
Part No. VSMF2893GX01
OCR Text ... coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 10 20...
Description High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH

File Size 209.02K  /  8 Page

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    TSAL7200-16

Vishay Siliconix
Part No. TSAL7200-16
OCR Text ... coefficient of v f i f = 1 ma tk vf --1.8-mv/k reverse current v r = 5 v i r - - 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j -40-pf radiant intensity i f = 100 ma, t p = 20 ms i e 40 72 200 mw/sr i f = 1 a, t p = 100 s...
Description High Power Infrared Emitting Diode

File Size 113.96K  /  5 Page

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    VSMF2893SLX01

Vishay Siliconix
Part No. VSMF2893SLX01
OCR Text ... coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 10 20...
Description High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH

File Size 150.75K  /  6 Page

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