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IRF[International Rectifier]
http://
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| Part No. |
IRGPS40B120UD IRGPS40B120UDPBF
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| OCR Text |
...000
Energy (J)
1000
tdOFF
swiching Time (ns)
2500 2000 1500 1000 500 0 0 20
EOFF EON
100
td ON tF tR
40 IC (A)
60
80
10 20 40 60 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 600V RG... |
| Description |
80 A, 1200 V, N-CHANNEL IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
130.59K /
12 Page |
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ST Microelectronics
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| Part No. |
L4970A
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| OCR Text |
... f d v i voltage stability of swiching frequency v i = 15v to 45v 2 6 % 5 d f t j temperature stability of swiching frequency t j = 0 to 125 c1%5 f max maximum operating switching frequency v o = v ref ; r 4 = 10k w i o = 10a; c 9... |
| Description |
10A SWITCHING REGULATOR
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| File Size |
6,734.80K /
21 Page |
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IRF[International Rectifier]
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| Part No. |
IRG4PH40UD2-E IRG4PH40UD2-EPBF
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| OCR Text |
... Switching Losses (mJ)
Total swiching Losses (mJ)
I C = 42A 10 I C = 21A
I C = 10.5A
1
10 20 30 40 50
-60 -40 -20
0
20
40
60
80 100 120 140 160
RG, Gate Resistance ()
T J, Junction Temperature (C)
Fig... |
| Description |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
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| File Size |
247.90K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRGP30B60KD-E IRGP30B60KD-EP
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| OCR Text |
...00
EOFF 1500 EON 1000 500
swiching Time (ns)
tdOFF
100
td ON tF tR
0 0 20 40 IC (A) 60 80
10 0 20 40 60 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 200H; VCE = 400V RG = 10; VGE = 15V
Fig. 14 - T... |
| Description |
600V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
599.77K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRGIB7B60KDPBF
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| OCR Text |
...0
300 200 100 0 0
EOFF
swiching Time (ns)
400
tdOFF
Energy (J)
100
tF tdON tR
10
EON
5
10 IC (A)
15
20
0
5
10
15
20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.1mH; VC... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
898.75K /
12 Page |
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it Online |
Download Datasheet |
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Vishay Semiconductors
IRF[International Rectifier]
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| Part No. |
20MT120UF 20MT120UFPBF
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| OCR Text |
...rev. D 02/03
2400 2000 1600
swiching Time (ns)
1000
EON
Energy (J)
tdOFF
100
1200 800 400 0 0 10 20 IC (A) 30 40 50 EOFF
tF
tdON tR
10 0 10 20 30 40 50
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1... |
| Description |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
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| File Size |
694.93K /
13 Page |
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IRF[International Rectifier]
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| Part No. |
IRGIB6B60KDPBF
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| OCR Text |
...700 600 EON 500
1000
tdOFF
swiching Time (ns)
Energy (J)
100
400 EOFF 300 200 100 0 0 5 10 IC (A) 15 20
tF tdON
10
tR
1 0 5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 10... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
250.78K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGI4061DPBF
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| OCR Text |
...
IRGI4061DPbF
700 600 EOFF
swiching Time (ns)
1000
500
Energy (J)
tdOFF
100
400 300 200 100 0 0 4 8 12 I C (A) 16 20 24 EON
tF tdON
10
tR
1 0 4 8 12 16 20 24
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
285.15K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
40MT120UH 40MT120UHT
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| OCR Text |
...40 IC (A) 60 80 100 EON EOFF
swiching Time (ns)
100
tR tdON tF
10 0 20 40 60 80 100
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=250H; VCE= 400V RG= 5; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 125C; L=2... |
| Description |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
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| File Size |
673.49K /
13 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGB5B120KD
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| OCR Text |
...800
Energy (J)
1000
EON
swiching Time (ns)
tdOFF
100
600 400 200 0 0 4 8 IC (A)
EOFF
tF tR
12 16 20
10 4 6 8 10 12 14
tdON
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=3.7mH; VCE= 600V RG= 50; VGE= 1... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
222.92K /
12 Page |
View
it Online |
Download Datasheet |
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