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Hitachi,Ltd.
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| Part No. |
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6
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| OCR Text |
... precharge to cas hold time t rpc 555ns
hm51w17805 series 11 edo page mode cycle hm51w17805 -5 -6 -7 parameter symbol min max min max m...1. ac measurements assume t t = 2 ns. 2. an initial pause of 200 m s is required after power up fo... |
| Description |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
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| File Size |
430.53K /
33 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM416C4100B
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| OCR Text |
... ras to cas precharge time t rpc 5 5 5 ns access time from cas precharge t cpa 26 30 35 ns 3 fast page mode cycle time t pc 31 35 4...1)00b truth table ras lcas ucas w oe dq0 - dq7 dq8-dq15 state h x x x x hi-z hi-z standby l h h x x ... |
| Description |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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| File Size |
833.81K /
35 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM364C213CK
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| OCR Text |
...precharge to cas hold time t rpc 3 3 ns 11 access time from cas precharge t cpa 35 40 ns 3,11 fast page mode cycle time t pc 35 40 ns f...1,2.)
dram module kmm364c213ck/cs notes an initial pause of 200us is required after power-up follo... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
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| File Size |
366.80K /
19 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F1600BK2 KMM366F1680BK2
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 20 25 ns 11 hy...1 ttl loads and 100pf. operation within the t rcd (max) limit insures that t rac (max) can be met.... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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| File Size |
425.18K /
20 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F1600BK3 KMM366F1680BK3
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 25 30 ns 11 hy...1 ttl loads and 100pf. operation within the t rcd (max) limit insures that t rac (max) can be met.... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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| File Size |
444.05K /
21 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F203CK KMM366F213CK
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns 14 access time from cas precharge t cpa 28 35 ns 3,14 hyper page cycle time t hpc 20 25 ns 12 h...1,2.)
dram module kmm366f213ck kmm366f203ck notes an initial pause of 200us is required after powe... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
2M x 64 DRAM DIMM(2M x 64 ?ㄦ?RAM妯″?)
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| File Size |
408.83K /
20 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F410CK1 KMM366F400CK1
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 25 30 ns 13 hy...1 ttl loads and 100pf, voh=2.0v and vol=0.8v. operation within the t rcd (max) limit insures that ... |
| Description |
4M x 64 DRAM DIMM(4M x 64 动RAM模块)
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| File Size |
384.74K /
20 Page |
View
it Online |
Download Datasheet |
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