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  rg-213 Datasheet PDF File

For rg-213 Found Datasheets File :: 370    Search Time::2.109ms    
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    STD3NK80Z-1 9565

STMicroelectronics
Part No. STD3NK80Z-1 9565
OCR Text ...o 640V VDD = 400 V, ID = 1.25 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640 V, ID = 2.5 A, VGS = 10 V SOURCE DRAIN DIODE...213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 7/10 STP3NK80Z - STF3NK80Z - STD3NK...
Description N-CHANNEL 800V - 3.8 OHM - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
From old datasheet system

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    FDH3632 FDP3632 FDB3632 FDI3632

FAIRCHILD[Fairchild Semiconductor]
Part No. FDH3632 FDP3632 FDB3632 FDI3632
OCR Text ...REQUIRED PEAK IAS VGS DUT tP 0V RG VDD + BVDSS VDS VDD IAS 0.01 0 tAV Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDS VDD Qg(TOT) VDS L VGS = 10V VGS + VDD DUT Ig(REF)...
Description N-Channel PowerTrench MOSFET

File Size 243.85K  /  11 Page

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    ONSEMI[ON Semiconductor]
Part No. NTL4502N NTL4502NT1
OCR Text ...V, VG=10 V, IPK=60 A, L=0.1 mH, RG= 1.0 kW) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ORDERING INFORMATION Devic...213 pF nC SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn-On Delay Time Rise Time Turn-...
Description Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAK-TM Package

File Size 63.78K  /  6 Page

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    STD2NK70Z STD2NK70ZT4 STD2NK70Z-1

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STD2NK70Z STD2NK70ZT4 STD2NK70Z-1
OCR Text ...t S VDD = 350 V, ID = 0.8 A, RG = 4.7 , VGS = 10 V (see Figure 17) VDD = 560 V, ID = 0.8 A, VGS = 10 V (see Figure 20) Table 9: Source...213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 8/12 STD2NK70Z - STD2NK70Z-1 TO-...
Description N-CHANNEL 700 V - 6 Ohm - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET
From old datasheet system
N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

File Size 248.31K  /  12 Page

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    STP4NK80ZFP STP4NK80Z STD4NK80Z 9250 STD4NK80Z-1

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
Part No. STP4NK80ZFP STP4NK80Z STD4NK80Z 9250 STD4NK80Z-1
OCR Text ...ditions VDD = 400 V, ID = 1.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640 V, ID = 3 A, VGS = 10V Min. Typ. 13 12 22.5 4.2...213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 10/13 STP4NK80Z - STP4NK80ZFP - STD...
Description N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?/a> Power MOSFET
N-CHANNEL 800V - 3 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET
From old datasheet system
N-Channle MOSFET
N-CHANNEL 800V - 3 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?/a> Power MOSFET
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET N沟道800V 3ohm -A TO-220/TO-220FP/DPAK/IPAK齐保护的SuperMESH⑩功率MOSFET

File Size 620.88K  /  13 Page

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    FDB3632 FDP3632 FDI3632

FAIRCHILD[Fairchild Semiconductor]
Part No. FDB3632 FDP3632 FDI3632
OCR Text ...REQUIRED PEAK IAS VGS DUT tP 0V RG VDD + BVDSS VDS VDD IAS 0.01 0 tAV Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDS VDD Qg(TOT) VDS L VGS = 10V VGS + VDD DUT Ig(REF)...
Description N-Channel PowerTrench MOSFET 100V/ 80A/ 9m
N-Channel PowerTrench MOSFET 100V, 80A, 9mз

File Size 199.16K  /  11 Page

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    PMV213SN PMV213SN-02

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. PMV213SN PMV213SN-02
OCR Text ...D = 50 V; RL = 33 ; VGS = 10 V; RG = 6 VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 ID = 1.2 A; VDD = 80 V; VGS = 10 V; Figure 13 7 1.4 2.5 ...213 490 250 575 m m 10 1 100 100 A A nA 2 1.2 3 4 4.4 V V V 100 90 V V Conditions Min Typ Max Unit ...
Description uTrenchMOS(tm) standard level FET
From old datasheet system
mTrenchMOS? standard level FET
UTrenchMOS standard level FET

File Size 82.84K  /  12 Page

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    2SK3811 2SK3811-ZP

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3811 2SK3811-ZP
OCR Text ...Starting Tch = 25C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. RG = 25 , Tch(peak) 150C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest vers...
Description SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET

File Size 138.20K  /  8 Page

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    STN1HNK60 STQ1HNK60R-AP 1HNK60 1HNK60R STD1NK60 STD1NK60-1 STD1NK60T4 STQ1HNK60R D1NK60

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STN1HNK60 STQ1HNK60R-AP 1HNK60 1HNK60R STD1NK60 STD1NK60-1 STD1NK60T4 STQ1HNK60R D1NK60
OCR Text ... nC VDD = 300 V, ID = 0.5 A, RG= 4.7 , VGS = 10 V (Resistive Load see, Figure 21) VDD = 480V, ID = 1 A, VGS = 10V, RG= 4.7 (see, Figure ...213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 11/15 STD1NK6...
Description N-CHANNEL 600V - 8 OHM - 1A DPAK/IPAK/TO-92/SOT-223 SUPERMESH MOSFET
N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

File Size 465.28K  /  15 Page

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    STD22NM20N STD22NM20NT4

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD22NM20N STD22NM20NT4
OCR Text ...2) Ciss Coss Crss Coss eq. (**) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equi...213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 7/10 STD22NM2...
Description N-CHANNEL 200V - 0.088ohm - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET N沟道200 0.088ohm - 22A条的DPAK超低栅极电荷的MDmesh MOSFET的二

File Size 262.69K  /  10 Page

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