revolutionary pdf Datasheet P10 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : AD421BN 24050 MP2130 MBJ20 MJH16012 STM8500A MP2130 31M10
	Product Description
	Full Text Search

revolutionary Datasheet PDF File

For revolutionary Found Datasheets File :: 1784 Search Time::1.11ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

				Xilinx, Inc.
Part No.	XQVR1000
OCR Text	... the virtex family represents a revolutionary step forward in programmable logic design. combining a wide variety of programmable system features, a rich hierarchy of fast, flexible interconnect resources, and advanced pro- cess technology,...
Description	QPRO Virtex 2.5V Radiation Hardened FPGAs(QPRO Virtex 2.5V ?茶?灏???哄?缂???ㄩ???
File Size	74.25K / 8 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	DT28F016SV-080 DT28F016SV-100 E28F016SV-070 E28F016SV-065 DA28F016SV-120 DA28F016SV-075 DA28F016SV-070 DA28F016SV-065 28F016SV E28F016SV-080 E28F016SV-075 E28F016SV-120 DA28F016SV-080
OCR Text	... 28F016SA, 28F008SA Command Set revolutionary Architecture Multiple Command Execution Program during Erase Command Super-Set of the Intel 28F008SA Page Buffer Program 2 A Typical Deep Power-Down 32 Independently Lockable Blocks State-of...
Description	16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
File Size	605.70K / 63 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	DT28F016SA-100 DT28F016SA-150 DA28F016SA-080 E28F016SA-070 E28F016SA-080 E28F016SA-100 E28F016SA-120 E28F016SA-150 DA28F016SA-070 DA28F016SA-100 DA28F016SA-120 DA28F016SA-150
OCR Text	... x 23.7 mm SSOP Package n revolutionary Architecture Pipelined Command Execution Program during Erase Command Superset of Intel 28F008SA 1 mA Typical I CC in Static Mode 1 A Typical Deep Power-Down 32 Independently Lockable Blocks ...
Description	28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
File Size	801.03K / 55 Page	View it Online	Download Datasheet

				White Electronic Designs ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA-F32 EDI88512CA_LPA-F36 EDI88512CA_LPA-K EDI88512CA_LPA-N EDI88512CA_LPA-N36 EDI88512CA_LPA-T EDI88512CANB EDI88512LPAKM EDI88512LPAKC EDI88512LPANI EDI88512CATB EDI88512LPATB EDI88512LPAF36M EDI88512LPAF36I EDI88512LPAF36C EDI88512LPAF36B EDI88512LPAF32M EDI88512LPAF32I EDI88512LPAF32C EDI88512LPAF32B EDI88512CAB32M EDI88512CA/LPA-C EDI88512CA/LPA-K EDI88512CA/LPA-N EDI88512CA/LPA-N36 EDI88512CAB32I EDI88512LPAB32I EDI88512CA/LPA-F36 EDI88512LPAB32B EDI88512LPAB32C EDI88512LPAB32M EDI88512CAF32B EDI88512CA/LPA-T EDI88512CA/LPA-B32 EDI88512CAB32C EDI88512LPANB EDI88512LPANC EDI88512CAN36B EDI88512CAN36C EDI88512CANC EDI88512LPAN36C EDI88512LPAN36B EDI88512LPAN36M EDI88512CANM EDI88512CANI EDI88512CAN36I EDI88512LPAN36I EDI88512CAN36M EDI88512CA/LPA-F32 EDI88512CAKI EDI88512LPA55B32B EDI88512LPA55B32I EDI88512LPA55B32C EDI88512LPA55CB EDI88512LPA55B32M EDI88512LPA55CC EDI88512LPA55CI EDI88512LPA55F32B EDI88512LPA55CM EDI88512LPA55F32I EDI88512LPA55F32C EDI88512LPA55F36B EDI88512LPA55F32M EDI88512LPA55F36I EDI88512LPA55F36C EDI88512LPA55F36M EDI88512LPA55KC EDI88512LPA55KB EDI88512LPA55KI EDI88512LPA55N36I EDI88512LPA55N36C EDI88512LP
OCR Text	...ge 140) 36 lead JEDEC Approved revolutionary Pinout * Ceramic Flatpack (Package 316) * Ceramic SOJ (Package 327) * Ceramic LCC (Package 502) Single +5V (10%) Supply Operation The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. The 3...
Description	20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
File Size	265.80K / 9 Page	View it Online	Download Datasheet

				Integrated Silicon Solu... ISSI[Integrated Silicon Solution Inc] ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc EPCOS AG
Part No.	IS63LV1024 IS63LV1024-10TI IS63LV1024-10T IS63LV1024-10KI IS63LV1024-10K IS63LV1024-10JI IS63LV1024-10J IS63LV1024-15K IS63LV1024-12J IS63LV1024-12JI IS63LV1024-12K IS63LV1024-12KI IS63LV1024-12TI IS63LV1024-15J IS63LV1024-15JI IS63LV1024-15KI IS63LV1024-15T IS63LV1024-15TI IS63LV1024-8J IS63LV1024-8JI IS63LV1024-8K IS63LV1024-8KI IS63LV1024-8T IS63LV1024-8TI IS63LV1024-12T
OCR Text	revolutionary PINOUT FEATURES * High-speed access times: 8, 10, 12 and 15 ns * High-performance, low-power CMOS process * Multiple center power and ground pins for greater noise immunity * Easy memory expansion with CE and OE options * CE...
Description	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V revolutionary PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V revolutionary PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V revolutionary PINOUT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
File Size	67.30K / 8 Page	View it Online	Download Datasheet

				INTEL
Part No.	LXT971ALC LXT971ABC LXT971ABE
OCR Text	...scharge Event (CDE) protection. revolutionary design techniques incorporate Intel's Optimal Signal Processing (OSP) architecture, an ideal combination of digital signal processing and analog design techniques designed for die size, power co...
Description	LAN TRANSCEIVER\|SINGLE\|CMOS\|BGA\|64PIN\|PLASTIC Dual-speed 3.3V 10/100 Ethernet Transceiver
File Size	51.34K / 2 Page	View it Online	Download Datasheet

				Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
Part No.	IC63LV1024 IC63LV1024-8TI IC63LV1024-10B IC63LV1024-10BI IC63LV1024-10J IC63LV1024-10JI IC63LV1024-10K IC63LV1024-10KI IC63LV1024-10T IC63LV1024-10TI IC63LV1024-12B IC63LV1024-12BI IC63LV1024-12J IC63LV1024-12JI IC63LV1024-12K IC63LV1024-12KI IC63LV1024-12T IC63LV1024-12TI IC63LV1024-15B IC63LV1024-15BI IC63LV1024-15J IC63LV1024-15JI IC63LV1024-15K IC63LV1024-15KI IC63LV1024-15T IC63LV1024-15TI IC63LV1024-8B IC63LV1024-8BI IC63LV1024-8J IC63LV1024-8JI IC63LV1024-8K IC63LV1024-8KI IC63LV1024-8T
OCR Text	...HIGH-SPEED CMOS STATIC RAM 3.3V revolutionary PINOUT FEATURES * High-speed access times: 8, 10, 12 and 15 ns * High-performance, low-power CMOS process * Multiple center power and ground pins for greater noise immunity * Easy memory expan...
Description	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V revolutionary PINOUT ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
File Size	124.21K / 10 Page	View it Online	Download Datasheet

				POINN[Power Innovations Ltd] Power Innovations Limited
Part No.	BULD50 BULD50KC BULD50SL
OCR Text	...ast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal...
Description	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
File Size	229.58K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPA08N50C3 SPP08N50C3 SPI08N50C3
OCR Text	...Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-3...
Description	Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses & fastest Switching
File Size	262.59K / 13 Page	View it Online	Download Datasheet

For revolutionary Found Datasheets File :: 1784 Search Time::1.11ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

▲Up To Search▲

Price and Availability