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  pd-drm Datasheet PDF File

For pd-drm Found Datasheets File :: 148    Search Time::4.328ms    
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    NXP
Philips
Part No. BUK101-50GL
OCR Text ... 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1e-07 1e-05 1e-03 1e-01 1e+01 t / s zth / (k/w) 10 1 0.1 0.01 0 0.5 0.2 0.1 0.05 0.02 buk101-50gl d = d = t p t p t t p ...
Description PowerMOS transistor Logic level TOPFET(功率MOS晶体管逻辑电平TOPFET)

File Size 106.13K  /  11 Page

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    NXP
Philips
Part No. BUK101-50GS
OCR Text ... 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1e-07 1e-05 1e-03 1e-01 1e+01 t / s zth / (k/w) 10 1 0.1 0.01 0 0.5 0.2 0.1 0.05 0.02 buk101-50gs d = d = t p t p t t p ...
Description PowerMOS transistor TOPFET(功率MOS晶体管TOPFET)

File Size 111.24K  /  11 Page

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    PE40F

SanRex Corporation
Part No. PE40F
OCR Text pd,pe,kk ) 40f thyristor module ul:e76102 m v drm
Description THYRISTOR MODULE

File Size 142.62K  /  2 Page

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    BUK9640

Philips Semiconductors
Part No. BUK9640
OCR Text ... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c i d & i dm = ...
Description TrenchMOS transistor Logic level FET

File Size 74.63K  /  9 Page

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    BUK9515 BUK9515-55

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BUK9515 BUK9515-55
OCR Text ... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c i d & i dm = ...
Description TrenchMOS transistor Logic level FET
TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶体管逻辑电平FET)
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)

File Size 63.59K  /  8 Page

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    Philips
Part No. BUK7840-55
OCR Text ... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t sp ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t sp ); conditions: v gs 3 10 v fig.3. safe operating area. t sp = 25 ?c i d & i dm =...
Description TrenchMOS(tm) transistor Standard level FET

File Size 51.36K  /  9 Page

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    Vishay Semiconductors
Part No. IL440-6X009T IL440-6X007 IL440-6X019T IL440-6X016 IL440-2 IL440-5X009 IL440-5X016 IL440-5X017T IL440-4X009 IL440-5-X006 IL440-4X007
OCR Text ...charge test voltage method a, v pd = v iorm x 1.875 v pd 1669 v peak p so 500 mw i si 250 ma t si 175 c clearance distance standard dip-6 7 mm creepage distance standard dip-6 7mm clearance distance 400 mil dip-6 8 mm creepage distance ...
Description Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN

File Size 84.81K  /  6 Page

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    Vishay Semiconductors
Part No. VO3063-X007T VO3063-X006
OCR Text ...charge test voltage method a, v pd = v iorm x 1.875 v pd 1325 v peak safety limiting values - maximum values allowed in the event of a failure safety power rating p so 400 mw safety current rating i si 150 ma safety temperature rating t...
Description
File Size 108.59K  /  6 Page

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    BUK108-50GS

NXP Semiconductors
Philips
Part No. BUK108-50GS
OCR Text ... 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1 100 vds / v 100 10 1 0.1 buk108-50gs 10 id & idm / a dc overload protection characteristics not shown 100 us 1 ms ...
Description    PowerMOS transistor TOPFET
PowerMOS transistor TOPFET(功率MOS晶体管TOPFET)

File Size 118.26K  /  12 Page

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    Supertex, Inc.
Part No. DN3525N8-G
OCR Text ...ipation vs. ambient temperature pd (watts) t a ( o c) maximum rated safe operating area i d (amperes) v ds (volts) thermal response characteristics thermal resistance (normalized) t p (seconds) 1 1000 100 10 to-243aa (pulsed) t a...
Description N-Channel Depletion-Mode Vertical DMOS FETs

File Size 458.95K  /  5 Page

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For pd-drm Found Datasheets File :: 148    Search Time::4.328ms    
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