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IRF[International Rectifier]
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Part No. |
IRH9250
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OCR Text |
...ckage to source bonding pad.
modified MOSFET symbol showing the internal inductances.
LS
Internal Source Inductance
--
8.7
--
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
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Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
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File Size |
101.45K /
4 Page |
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Anadigics Inc
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Part No. |
ACD0900
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OCR Text |
... High Reliability
S3 Package modified 16 Pin SOIC PRODUCT DESCRIPTION
The ACD0900 MMIC is a high performance downconverter fabricated entirely in GaAs. It is designed for use as the second conversion stage in double-conversion tuners an... |
Description |
The ACD0900 MMIC is a high performance downconverter fabricated entirely in GaAs.
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File Size |
98.00K /
13 Page |
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it Online |
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Motorola
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Part No. |
MC9S12UF32
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OCR Text |
... Version
Summary of Changes
modified SMRAM mapping to allow 1k byte 16-bit block mappable to Vector Space. Update spec with review feedback. modified Device pinout to separate D+ D- for high speed and low speed operation. Remap Timer pi... |
Description |
System on a Chip Guide
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File Size |
489.66K /
128 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
JANTX2N6794
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OCR Text |
...ee figure 10
Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGS... |
Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)
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File Size |
189.48K /
6 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6762 JANTX2N6762
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OCR Text |
...ee figure 10
Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGS... |
Description |
POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)
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File Size |
197.89K /
6 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6768 JANTX2N6768
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OCR Text |
...ee figure 10
Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGS... |
Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.300ohm, Id=14A)
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File Size |
197.98K /
6 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6770 JANTX2N6770
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OCR Text |
...ee figure 10
Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGS... |
Description |
POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)
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File Size |
195.54K /
6 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6786 JANTX2N6786
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OCR Text |
...ee figure 10
Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGS... |
Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)
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File Size |
190.65K /
6 Page |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6788 2N6788 JANTX2N6788
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OCR Text |
...ee figure 10
Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGS... |
Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)
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File Size |
196.23K /
6 Page |
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it Online |
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Price and Availability
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