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IXYS, Corp.
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| Part No. |
DGS13-025CS
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| OCR Text |
... due to additional injection of minority carriers high switching speed - low junction capacity of gaas diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn... |
| Description |
21 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
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| File Size |
51.19K /
2 Page |
 View
it Online |
Download Datasheet
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ON Semi
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| Part No. |
MTP75N05HD_D ON2644
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| OCR Text |
...ode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 12. It is this s... |
| Description |
TMOS POWER FET 75 AMPERES 50 VOLTS
From old datasheet system
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| File Size |
149.43K /
8 Page |
View
it Online |
Download Datasheet |
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IXYS, Corp.
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| Part No. |
DGSS10-06CC
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| OCR Text |
... due to additional injection of minority carriers high switching speed - low junction capacity of gaas diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn... |
| Description |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE
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| File Size |
55.72K /
3 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MMSF1308_D ON2250
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| OCR Text |
...ode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 10. It is this s... |
| Description |
Low Power Surface Mount Products
From old datasheet system
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| File Size |
173.78K /
10 Page |
View
it Online |
Download Datasheet |
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