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IRF[International Rectifier]
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| Part No. |
IRHI7460SE
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation perf... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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| File Size |
83.17K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7264SE
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation perf... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
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| File Size |
91.23K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM7450SE
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation perf... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
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| File Size |
91.39K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM7C50SE IRHM2C50SE
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| OCR Text |
...limits of (Si)/Sec. the devices irradiated to 0.5 X 105 Rads(Si) and 1 x International Rectifier radiation hardened HEXFETs 105 Rads (Si) are identical and are presented in Table have been characterized in neutron and heavy ion 1, column 1,... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
101.94K /
4 Page |
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it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
S6B1741 DS_S6B1741_R00
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| OCR Text |
...s of semiconductor devices when irradiated with light. Consequently, the users of the packages which may expose chips to external light such as COB, COG, TCP and COF must consider effective methods to block out light from reaching the IC on... |
| Description |
128 SEG / 129 COM DRIVER & CONTROLLER FOR 4 GRAY SCALE STN LCD
From old datasheet system
Mobile DDI
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| File Size |
468.66K /
78 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM9064
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-radiation p... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)
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| File Size |
101.13K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM9160
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used.
Both pre- and post-radiation p... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
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| File Size |
87.31K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHN7C50SE IRHN2C50SE
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| OCR Text |
...radiation limits of the devices irradiated to 0.5 x 105 Rads (Si) and 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN2C50SE and IRHN7C50SE, respectively. The values in Table 1 will be met for either of the two l... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
80.62K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHN8130 IRHN7130
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN7130. Device performance limits at a post radiation level of 1 x 106 Rads (Si) are presented in Table 1, column 2, IRH... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
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| File Size |
444.31K /
14 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHN8230 IRHN7230
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN7230. Device performance limits at a post radiation level of 1 x 106 Rads (Si) are presented in Table 1, column 2, IRH... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
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| File Size |
450.04K /
14 Page |
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it Online |
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