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TriQuint Semiconductor, Inc.
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| Part No. |
TGA8014-SCC TGA8014-SCC-15
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| OCR Text |
...= vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i d... |
| Description |
6 - 18 GHz Power Amplifier
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| File Size |
176.79K /
10 Page |
 View
it Online |
Download Datasheet
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TriQuint Semiconductor, Inc.
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| Part No. |
TGA2924-SG-T/R
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| OCR Text |
...v @ 1.2 a (quiescent) ? 0.5 m hfet technology ? 2 lead cu-alloy base package fixtured measured performance bias conditions: vd = 8 v, idq =1.2 a performance data taken in a 2.6 ghz application circuit primary applications ? mmds pt-pt a... |
| Description |
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| File Size |
376.46K /
12 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
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| Part No. |
TGA2924-SG
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| OCR Text |
...v @ 1.2 a (quiescent) ?0.5 m m hfet technology ? 2 lead cu-alloy base package fixtured measured performance bias conditions: vd = 8 v, idq =1.2 a performance data taken in a 2.6 ghz application circuit primary applications ? mmds pt-pt a... |
| Description |
10 Watt MMDS Packaged Amplifier
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| File Size |
270.25K /
11 Page |
View
it Online |
Download Datasheet |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGA2923-SG-T/R
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| OCR Text |
...v @ 1.2 a (quiescent) ? 0.5 m hfet technology ? 2 lead cu-alloy base and internally partially matched package fixtured measured performance bias conditions: vd = 8 v, idq =1.2 a performance data taken in a 3.5 ghz application circuit pr... |
| Description |
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| File Size |
406.47K /
12 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4118-EPU TGF4118
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| OCR Text |
hfet
4118
* * * * *
0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4118-EPU RF Perfo... |
| Description |
18 mm Discrete hfet
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| File Size |
151.94K /
9 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
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| Part No. |
TGA4501-EPU
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| OCR Text |
... = vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i d... |
| Description |
28-31 GHz Ka Band HPA 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
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| File Size |
1,039.85K /
9 Page |
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it Online |
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TriQuint Semiconductor,Inc.
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| Part No. |
TGA2921-SG
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| OCR Text |
...00-800 ma (quiescent) ?0.5 m m hfet technology ? 2 lead cu base smt package fixtured measured performance bias conditions: vd = 8 v, idq =800 ma performance data taken @ in a 5.75ghz application circuit primary applications ? 802.11a wla... |
| Description |
4 Watt 802.11a Packaged Amplifier
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| File Size |
327.25K /
12 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGA8310-SCC TGA8310-SCC-15
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| OCR Text |
...= vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i d... |
| Description |
2 - 20 GHz Low Noise Amplifier
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| File Size |
401.47K /
14 Page |
View
it Online |
Download Datasheet |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGA8810-SCC
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| OCR Text |
...= vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i d... |
| Description |
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| File Size |
321.52K /
9 Page |
View
it Online |
Download Datasheet |
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