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ALLEGRO[Allegro MicroSystems]
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| Part No. |
A8905CLB 8905
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| OCR Text |
...g commutation scheme. The three halfbridge outputs are controlled by a state machine. There are six possible combinations. In each state, one output is high (sourcing current), one low (sinking current), and one is OFF (high impedance or `Z... |
| Description |
3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER WITH BACK-EMF SENSING
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| File Size |
161.34K /
12 Page |
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it Online |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM100DU-12F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Trench Gate Design Dual IGBTMOD?100 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts
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| File Size |
104.08K /
4 Page |
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it Online |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM100DU-34KA
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Dual IGBTMOD 100 Amperes/1700 Volts
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| File Size |
441.82K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM150DU-24F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
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| File Size |
90.31K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM150DU-34KA
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Dual IGBTMOD 150 Amperes/1700 Volts
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| File Size |
441.55K /
4 Page |
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it Online |
Download Datasheet |
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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM200DU-34KA
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified... |
| Description |
Dual IGBTMOD KA-Series Module 200 Amperes/1700 Volts
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| File Size |
563.81K /
4 Page |
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it Online |
Download Datasheet |
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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM300DU-12F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
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| File Size |
64.44K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM300DU-12H
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Dual IGBTMODU-Series Module 300 Amperes/600 Volts
Dual IGBTMOD U-Series Module 300 Amperes/600 Volts
Dual IGBTMOD⑩ U-Series Module 300 Amperes/600 Volts
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| File Size |
55.99K /
4 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM300DU-24F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
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| File Size |
92.98K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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