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    37000-A1 12000-A1 23000-A1 26100-B1 28000-A1 M542

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. 37000-A1 12000-A1 23000-A1 26100-B1 28000-A1 M542
OCR Text ...ansition. it is a 50 ohm line fabricated on 10-mil thick alumina, with an 8-mil pitch, ground-signal-ground (g-s-g) probe pattern at one end. the two ground pads are connected to the substrate backside with 8-mil diameter plated vias...
Description Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers
   Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers

File Size 127.64K  /  4 Page

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    ST16C2451 ST16C2450

Exar Corporation
Exar, Corp.
Part No. ST16C2451 ST16C2450
OCR Text ...-pin tqfp packages. the 2450 is fabricated in an advanced cmos process capable of operating from 2.97 volt to 5.5 volt power supply. the devices with a top marking of "a2 yyww" or newer have 5 volt tolerant inputs. applications ? portable ...
Description (ST16C2450 / ST16C2451) 2.97V TO 5.5V DUART
2.97V TO 5.5V DUART 2.97V.5V杜阿尔特

File Size 154.76K  /  29 Page

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    Exar, Corp.
Part No. XR16L2450
OCR Text ...in tqfp packages. the l2450 is fabricated in an advanced cmos process capable of operating from 2.25 volt to 5.5 volt power supply with 5 volt tolerant inputs. applications ? portable appliances ? telecommunication network routers ? ...
Description 2.25V TO 5.5V DUART 2.25V.5V的杜阿尔

File Size 285.56K  /  30 Page

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    MA4AGSW3

M/A-COM Technology Solutions, Inc.
Part No. MA4AGSW3
OCR Text ...ch with less loss than a device fabricated using conventional gaas processes. as much as a 0.3 db reduction in insertion loss can be realized at 50 ghz. this device is fabricated on an omcvd epitaxial wafer using a process design...
Description SP3T AlGaAs PIN Diode Switch

File Size 150.97K  /  7 Page

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    MA4AGSW4

M/A-COM Technology Solutions, Inc.
Part No. MA4AGSW4
OCR Text ...ch with less loss than a device fabricated using conventional gaas processes. as much as a 0.3 db reduction in insertion loss can be realized at 50 ghz. this device is fabricated on an omcvd epitaxial wafer using a process designed f...
Description SP4T AlGaAs PIN Diode Switch RoHS Compliant

File Size 109.77K  /  7 Page

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    Intersil, Corp.
Part No. HS9-302RH-8 HS0-302RH-Q HS9-302RH-Q
OCR Text ... switch is a monolithic device fabricated using radiation hardened cmos technology and the intersil dielectric isolation process for latch-up free operation. improved total dose hardness is obtained by layout (thin oxide tabs extending ...
Description CMOS Dual DPST Analog Switch; Temperature Range: -; Package: 14-FlatPack DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, CDFP14
CMOS Dual DPST Analog Switch; Temperature Range: -55&deg;C to 125&deg;C; Package: Die (Military Visual) DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, UUC

File Size 129.25K  /  4 Page

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    Analog Devices, Inc.
Part No. AD8319ACPZ-R2 AD8319ACPZ-R7
OCR Text ...ation: 3.0 v to 5.5 v @ 22 ma fabricated using high speed sige process applications rf transmitter pa setpoint controls and level monitoring power monitoring in radiolink transmitters rssi measurement in base stations, wlans, wimax,...
Description 1 MHz to 10 GHz, 40 dB Log Detector/Controller LOG OR ANTILOG AMPLIFIER, PDSO8

File Size 988.88K  /  20 Page

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