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ST Microelectronics
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| Part No. |
STW80NE06-10
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| OCR Text |
... factor 1.66 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c to-247 1 2 3 internal schematic diagram
stw80ne06-10 2/8 thermal data avalanche chara... |
| Description |
N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFET
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| File Size |
273.30K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW50NB20
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| OCR Text |
...tor 2.24 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 50 a, di/dt 200 a/ m s... |
| Description |
N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET
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| File Size |
275.94K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW50N10
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| OCR Text |
... 45 50 95 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 50 200 a a v sd ( * ) forward on voltage i sd =50a v gs =0 1.5 v t rr q rr i rrm ... |
| Description |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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| File Size |
281.99K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STU10NC70Z STU10NC70ZI
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| OCR Text |
...f, r=15k w) 4kv dv/dt( l ) peak diode recovery voltage slope 3 v/ns v iso insulation winthstand voltage (dc) -- 2000 v t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c (1)i sd 9.4a, di/dt 100a/ m s, v ... |
| Description |
N-Channel MOSFET
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| File Size |
144.33K /
10 Page |
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it Online |
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