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				Fuji
Part No.	6MBP50RUA060 6MBP100RUA060 6MBP20RUA060
OCR Text	...rements, in 1997, fuji electric developed the industry? first internal over- heat protection function for insulated gate bipolar transistors (igbts) and developed an r-ipm series that achieved high reliability by employing an all- silicon c...
Description	U-Series IGBT IPMs
File Size	84.98K / 4 Page	View it Online	Download Datasheet

				Sanyo
Part No.	LC74980W VOL89
OCR Text	developed Conversion of NTSC to XGA quality using resolution conversion technology for the first time in the industry LC74980W Overview The flat panel market has recently become extremely active, with new LCD, PDP, FED (field emission ...
Description	Video Signal-Processing IC for LCD TVs From old datasheet system
File Size	20.69K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	2SA1743
OCR Text	...e 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type pa...
Description	Silicon powor transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING From old datasheet system
File Size	127.67K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	2SD2163
OCR Text	...2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals. FEATURES * Mold pack...
Description	Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
File Size	94.48K / 4 Page	View it Online	Download Datasheet

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