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				International Rectifier
Part No.	IRF1405
OCR Text	... dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derati...limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.11mH RG = 25, IAS = ...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	... The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typ...limited by max. junction temperature. (See fig. 11). U Coss eff. is a fixed capacitance that giv...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	... dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derat...limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.13mH RG = 25, IAS =...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD4191L
OCR Text	...The device well suited for high current applications. Features VDS (V) = -40V ID = -34A RDS(ON) < 25m RDS(ON) < 34m (V GS = -10V) (VGS =...limited by junction temperature T J(MAX)=175C. D. The RJA is the sum of the thermal impedence from j...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	523.04K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON7700 AON7700L
OCR Text	...Source Voltage Continuous Drain Current B,H Pulsed Drain Current C Continuous Drain Current G Power Dissipation Power Dissipation B Maxi...limited by junction temperature T J(MAX)=150C. D. The RJA is the sum of the thermal impedence from j...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	204.62K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	... dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derati...limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temp...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...RF1704 can carry up to 20% more current than similar 175 C Tj max devices in the same package outline. This makes this part ideal for existi...limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 0.13mH, VGS = 10V RG = ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON7702 AON7702L
OCR Text	...Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current B Power Dissipation Power Dissipation B C Maxi...limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to le...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	204.11K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON7704 AON7704L
OCR Text	...Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current B Power Dissipation Power Dissipation B C Maxi...limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to le...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	207.16K / 4 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	.... . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . ....limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V,...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

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