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For combi Found Datasheets File :: 741    Search Time::1.516ms    
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    APT26GU30B

Advanced Power Technology
Part No. APT26GU30B
OCR Text ...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov...
Description MOSFET
POWER MOS 7 IGBT

File Size 161.52K  /  6 Page

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    SCHURTER INC
Part No. KP01.1111.46 KP01.1155.56 KP01.1165.56
OCR Text combi fit phone 707-778-6311 ? fax 707-778-6401 ? e-mail 73024.2314@compuserve.com ? website http://www.schurterinc.com combi fit continued
Description MALE, MAINS POWER CONNECTOR, SOLDER

File Size 140.04K  /  2 Page

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    APT32GU30B

Advanced Power Technology
Part No. APT32GU30B
OCR Text ...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov...
Description MOSFET
POWER MOS 7 IGBT

File Size 83.73K  /  6 Page

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    APT32GU30K

Advanced Power Technology
Part No. APT32GU30K
OCR Text ...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov...
Description POWER MOS 7 IGBT

File Size 187.30K  /  6 Page

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    APT40GP60B2DF2

Advanced Power Technolo...
Advanced Power Technology
Part No. APT40GP60B2DF2
OCR Text ...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov...
Description POWER MOS 7 IGBT
MOSFET

File Size 196.71K  /  9 Page

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    APT40GP60B APT40GP60S

Advanced Power Technolo...
Advanced Power Technology
Part No. APT40GP60B APT40GP60S
OCR Text ...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov...
Description POWER MOS 7 IGBT
MOSFET

File Size 96.16K  /  6 Page

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    M29F100T-90N1RTR

STMICROELECTRONICS
Part No. M29F100T-90N1RTR
OCR Text ...k can be erased separately, any combi- nation of blocks can be specified for multi-block erase or the entire chip may be erased. the erase operations are managed automatically by the p/e.c. the block erase operation can be sus- pended in or...
Description 64K X 16 FLASH 5V PROM, 90 ns, PDSO48

File Size 259.86K  /  30 Page

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    APT35GP120B2DF2

Advanced Power Technology
Part No. APT35GP120B2DF2
OCR Text ...mum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse re...
Description Power MOS 7 IGBT

File Size 119.12K  /  7 Page

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    SC452

Semtech Corporation
Part No. SC452
OCR Text ...trollers. Semtech's proprietary combi-Sense(R) technology provides a loss-less current sensing scheme which is extremely robust and easy to lay out. Eliminating the sense resistors reduces costs and PCB area, plus increases system efficienc...
Description Dual-Phase Single Chip IMVP-6 Vcore Power Supply

File Size 54.56K  /  1 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
Part No. IRFZ24PBF SIHFZ24
OCR Text ...vide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipati...
Description Power MOSFET

File Size 3,790.04K  /  7 Page

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For combi Found Datasheets File :: 741    Search Time::1.516ms    
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